P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ -30V, -3.1A, RDS(ON) = 80mW @VGS = -10V. RDS(ON) = 90mW @VGS = -4.5V. RDS(ON) = 120mW @VGS = -2.5V. ■ High dense cell design for extremely low RDS(ON). ■ Rugged and reliable. ■ Lead-free plating ; RoHS compliant. ■ SOT-23 package.

文件：396.52 Kbytes 页数：4 Pages

CET

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P-Channel Enhancement Mode Field Effect Transistor

30V, -3.1A, RDS(ON) = 80mW @VGS = -10V. RDS(ON) = 90mW @VGS = -4.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. SOT-23 package. Lead-free plating ; RoHS compliant. RDS(ON) = 120mW @VGS = -2.5V.

文件：398.36 Kbytes 页数：4 Pages

CET-MOS

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N Channel MOSFET

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N Channel MOSFET

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N Channel MOSFET

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