N-Channel Logic Level Enhancement Mode Field Effect Transistor

FEATURES ■ 30V, 52A, RDS(ON) = 11mΩ (typ) @VGS = 10V. RDS(ON) = 16mΩ (typ) @VGS = 5V. ■ Extra low gate charge. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ TO-220 & TO-263 package.

文件：516.69 Kbytes 页数：5 Pages

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N-Channel Logic Level Enhancement Mode Field Effect Transistor

FEATURES ● 30V, 52A, RDS(ON)=13.5mΩ @VGS=10V. RDS(ON)=20mΩ @VGS=4.5V. ● Super high dense cell design for extremely low RDS(ON). ● High power and current handling capability. ● TO-220 & TO-263 package

文件：516.77 Kbytes 页数：5 Pages

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N-Channel Logic Level Enhancement Mode Field Effect Transistor

FEATURES ● 30V, 52A, RDS(ON)=13.5mΩ @VGS=10V. RDS(ON)=20mΩ @VGS=4.5V. ● Super high dense cell design for extremely low RDS(ON). ● High power and current handling capability. ● TO-220 & TO-263 package

文件：530.47 Kbytes 页数：5 Pages

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N-Channel Logic Level Enhancement Mode Field Effect Transistor

FEATURES • 30V, 60A, RDS(ON)=10mΩ @VGS=10V. RDS(ON)=15mΩ @VGS=4.5V. • Super high dense cell design for extremely low RDS(ON). • High power and curent handing capability. • TO-220 & TO-263 package.

文件：513.64 Kbytes 页数：5 Pages

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N-Channel Logic Level Enhancement Mode Field Effect Transistor

FEATURES ■ 30V, 60A, RDS(ON) = 13.5mΩ @VGS = 10V. RDS(ON) = 18.5mΩ @VGS = 4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ TO-220 & TO-263 package.

文件：531.57 Kbytes 页数：5 Pages

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N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 60V, 135A, RDS(ON) = 4.6mΩ @VGS = 10V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead-free plating ; RoHS compliant. ■ TO-220 & TO-263 package.

文件：427.23 Kbytes 页数：4 Pages

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N-Channel Enhancement Mode Field Effect Transistor

FEATURES 60V, 144A, RDS(ON) = 4.0mW @VGS = 10V Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 package. RoHS compliant. RDS(ON) = 5.5mW @VGS = 4.5V.

文件：695.63 Kbytes 页数：5 Pages

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N-Channel Logic Level Enhancement Mode Field Effect Transistor

文件：515.34 Kbytes 页数：5 Pages

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N-Channel Logic Level Enhancement Mode Field Effect Transistor

文件：529.22 Kbytes 页数：5 Pages

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N-Channel MOSFET uses advanced trench technology

文件：1.10074 Mbytes 页数：4 Pages

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杜因特