N-Channel Enhancement Mode Field Effect Transistor

FEATURES 60V, 144A, RDS(ON) = 4.0mW @VGS = 10V Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 package. RoHS compliant. RDS(ON) = 5.5mW @VGS = 4.5V.

文件：695.63 Kbytes 页数：5 Pages

CET-MOS

华瑞

N Channel MOSFET

CET

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 60V, 118A, RDS(ON) = 4.0mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. RoHS compliant. RDS(ON) = 5.5mW @VGS = 4.5V.

文件：587.77 Kbytes 页数：5 Pages

CET-MOS

华瑞

SIL2 Switch/Proximity Relay-Out Repeater

FEATURES SIL 2 / SC 3 High voltage/current rating relay output Field open and short circuit detection In-field programmability by DIP Switch Three port isolation, Input/Output/Supply High Density, two channels per unit

文件：165.58 Kbytes 页数：2 Pages

GMI

SIL2 Switch/Proximity Relay-Out Repeater

FEATURES SIL 2 / SC 3 High voltage/current rating relay output Field open and short circuit detection In-field programmability by DIP Switch Three port isolation, Input/Output/Supply High Density, two channels per unit

文件：165.58 Kbytes 页数：2 Pages

GMI