N-Channel Enhancement Mode Field Effect Transistor

FEATURES 60V, 118A, RDS(ON) = 4.0mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. RoHS compliant. RDS(ON) = 5.5mW @VGS = 4.5V.

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CET-MOS

华瑞

N Channel MOSFET

CET

华瑞

SILICON POWER TRANSISTORS 4 AMPERES 80 VOLTS 20 WATTS

Complementary Darlington Power Transistors DPAK For Surface Mount Applications Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, convertors, and power amplifiers. • Lead Formed for Surface Mount Applications in Plastic

文件：270.59 Kbytes 页数：6 Pages

MOTOROLA

摩托罗拉

Silicon Power Rectifier Diode, 85 Amp

Features: ● Short Reverse Recovery Time ● Low Stored Charge ● Available in Cathode–to–Case (NTE6036) or Anode–to–Case (NTE6037) Style

文件：23.76 Kbytes 页数：2 Pages

NTE

5.5 thru 185 Volts 1500 Watts Transient Voltage Suppressors

DESCRIPTION: These Transient Voltage Suppressor devices are a series of Bi-directional Silicon Transient Suppressors used in AC applications where large voltage transients can permanently damage voltage-sensitive components. FEATURES: ● BIDIRECTIONAL ● 1500 WATTS PEAK POWER ● VOLTAGE RANGE FR

文件：257.86 Kbytes 页数：4 Pages

MICROSEMI

美高森美