Dual N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 20V, 6.5A, RDS(ON) = 22mΩ @VGS = 4.5V. RDS(ON) = 32mΩ @VGS = 2.5V. ■ Super High dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TSSOP-8 for Surface Mount Package. ■ ESD Protected: HB

文件：418.74 Kbytes 页数：4 Pages

CET

华瑞

Dual N-Channel Enhancement Mode Field Effect Transistor

FEATURES 20V, 6.5A, RDS(ON) = 22mW @VGS = 4.5V. RDS(ON) = 32mW @VGS = 2.5V. Super High dense cell design for extremely low RDS(ON). High power and current handing capability. TSSOP-8 for Surface Mount Package. Lead free product is acquired. ESD Protected: HBM 2000 V

文件：655.08 Kbytes 页数：4 Pages

CET-MOS

华瑞

Dual P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ -30V, -3.6A, RDS(ON) = 58mΩ @VGS = -10V. RDS(ON) = 85mΩ @VGS = -4.5V. ■ Super High dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TSSOP-8 for Surface Mount Package.

文件：361.16 Kbytes 页数：4 Pages

CET

华瑞

Dual N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 20V , 4.5A , RDS(ON)=30mΩ @VGS=4.5V. RDS(ON)=40mΩ @VGS=2.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ TSSOP-8 for Surface Mount Package.

文件：56.14 Kbytes 页数：5 Pages

CET

华瑞

IEC Appliance Inlet C14 with Filter, Fuseholder 1-or 2-pole (5 x 20 mm or 6.3x32 mm, with or without voltage selector (series-parallel)

文件：563.14 Kbytes 页数：5 Pages

SCHURTER

硕特

Dual N-Channel Enhancement Mode Field Effect Transistor

文件：578.51 Kbytes 页数：4 Pages

CET

华瑞

center frequency tolerance

文件：166.01 Kbytes 页数：2 Pages

MURATA

村田

center frequency tolerance

文件：176.98 Kbytes 页数：2 Pages

MURATA

村田

center frequency tolerance

文件：166.07 Kbytes 页数：2 Pages

MURATA

村田

center frequency tolerance

文件：166.52 Kbytes 页数：2 Pages

MURATA

村田