CEG8208

Dual N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■20V,6.5A,RDS(ON)=22mΩ@VGS=4.5V. RDS(ON)=32mΩ@VGS=2.5V. ■SuperHighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TSSOP-8forSurfaceMountPackage. ■ESDProtected:HB

CEG8208

Dual N-Channel Enhancement Mode Field Effect Transistor

FEATURES 20V,6.5A,RDS(ON)=22mW@VGS=4.5V. RDS(ON)=32mW@VGS=2.5V. SuperHighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TSSOP-8forSurfaceMountPackage. Leadfreeproductisacquired. ESDProtected:HBM2000V

CEG8304

Dual P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■-30V,-3.6A,RDS(ON)=58mΩ@VGS=-10V. RDS(ON)=85mΩ@VGS=-4.5V. ■SuperHighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TSSOP-8forSurfaceMountPackage.

CEG9926

Dual N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■20V,4.5A,RDS(ON)=30mΩ@VGS=4.5V. RDS(ON)=40mΩ@VGS=2.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■TSSOP-8forSurfaceMountPackage.

CEG0.6100.151

IEC Appliance Inlet C14 with Filter, Fuseholder 1-or 2-pole (5 x 20 mm or 6.3x32 mm, with or without voltage selector (series-parallel)

CEG2288

Dual N-Channel Enhancement Mode Field Effect Transistor

CEG231G44CCB101

center frequency tolerance

CEG231G73DCB100

center frequency tolerance

CEG231G74DCB100

center frequency tolerance

CEG231G76CCB100

center frequency tolerance