N-Channel Enhancement Mode Field Effect Transistor

FEATURES 20V, 29A, RDS(ON) = 13mW @VGS = 10V. RDS(ON) = 14mW @VGS = 4.5V. Super High dense cell design for extremely low RDS(ON). High power and current handing capability. RoHS compliant. RDS(ON) = 19mW @VGS = 2.5V. ESD Protected: 2000 V. RDS(ON) = 27mW @VGS = 1.8V.

文件：607.9 Kbytes 页数：5 Pages

CET-MOS

华瑞

N Channel MOSFET

CET

华瑞

Dual N-Channel Enhancement Mode Field Effect Transistor

FEATURES 20V, 8.5A, RDS(ON) = 14mW @VGS = 10V. RDS(ON) = 15mW @VGS = 4.5V. Super High dense cell design for extremely low RDS(ON). High power and current handing capability. TSSOP-8 for Surface Mount Package. RoHS compliant. RDS(ON) = 20mW @VGS = 2.5V. RDS(ON) = 28mW @VGS = 1.8V.

文件：494.5 Kbytes 页数：4 Pages

CET-MOS

华瑞

Dual N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 20V, 9.5A, RDS(ON) = 14mΩ @VGS = 4.5V. RDS(ON) = 20mΩ @VGS = 2.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ Surface mount Package.

文件：139.59 Kbytes 页数：4 Pages

CET

华瑞

N-Channel Enhancement Mode Field Effect Transistor

VOLTAGE 20 Volts CURRENT 9.5 Ampere FEATURE * Small flat package. (SO-8 ) * High density cell design for extremely low RDS(ON). * Rugged and reliable. * High saturation current capability. APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications.

文件：383.86 Kbytes 页数：3 Pages

CHENMKO

力勤