CEG2108E

Dual N-Channel Enhancement Mode Field Effect Transistor

FEATURES 20V,8.5A,RDS(ON)=14mW@VGS=10V. RDS(ON)=15mW@VGS=4.5V. SuperHighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TSSOP-8forSurfaceMountPackage. RoHScompliant. RDS(ON)=20mW@VGS=2.5V. RDS(ON)=28mW@VGS=1.8V.

CEM2108

DualN-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■20V,9.5A,RDS(ON)=14mΩ@VGS=4.5V. RDS(ON)=20mΩ@VGS=2.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■SurfacemountPackage.

CHM2108JPT

N-ChannelEnhancementModeFieldEffectTransistor

VOLTAGE20VoltsCURRENT9.5Ampere FEATURE *Smallflatpackage.(SO-8) *HighdensitycelldesignforextremelylowRDS(ON). *Ruggedandreliable. *Highsaturationcurrentcapability. APPLICATION *Servomotorcontrol. *PowerMOSFETgatedrivers. *Otherswitchingapplications.

CP2108

SINGLE-CHIPUSB-TO-QUAD-UARTBRIDGE

Celeron847

Intel
BGA1023