CEB100W SERIES

Features ⚫ Efficiency Up to 93.5% ⚫ Fixed Switching Frequency ⚫ Regulated Outputs ⚫ Remote On/Off ⚫ Fully Protected (OTP/OCP/OVP/UVLO) ⚫ 3000Vdc I/O Isolation ⚫ Operating Case Temperature -40 to +105℃ ⚫ Eighth Brick Size Meet Industrial Standard 2.45”x1.05”x0.5” ⚫ CB Test Certificate

文件：1.01649 Mbytes 页数：11 Pages

CINCON

幸康电子

CEB100W SERIES

Features ⚫ Efficiency Up to 93.5% ⚫ Fixed Switching Frequency ⚫ Regulated Outputs ⚫ Remote On/Off ⚫ Fully Protected (OTP/OCP/OVP/UVLO) ⚫ 3000Vdc I/O Isolation ⚫ Operating Case Temperature -40 to +105℃ ⚫ Eighth Brick Size Meet Industrial Standard 2.45”x1.05”x0.5” ⚫ CB Test Certificate

文件：1.01649 Mbytes 页数：11 Pages

CINCON

幸康电子

CEB100W SERIES

Features ⚫ Efficiency Up to 93.5% ⚫ Fixed Switching Frequency ⚫ Regulated Outputs ⚫ Remote On/Off ⚫ Fully Protected (OTP/OCP/OVP/UVLO) ⚫ 3000Vdc I/O Isolation ⚫ Operating Case Temperature -40 to +105℃ ⚫ Eighth Brick Size Meet Industrial Standard 2.45”x1.05”x0.5” ⚫ CB Test Certificate

文件：1.01649 Mbytes 页数：11 Pages

CINCON

幸康电子

CEB100W SERIES

Features ⚫ Efficiency Up to 93.5% ⚫ Fixed Switching Frequency ⚫ Regulated Outputs ⚫ Remote On/Off ⚫ Fully Protected (OTP/OCP/OVP/UVLO) ⚫ 3000Vdc I/O Isolation ⚫ Operating Case Temperature -40 to +105℃ ⚫ Eighth Brick Size Meet Industrial Standard 2.45”x1.05”x0.5” ⚫ CB Test Certificate

文件：1.01649 Mbytes 页数：11 Pages

CINCON

幸康电子

CEB100W SERIES

Features ⚫ Efficiency Up to 93.5% ⚫ Fixed Switching Frequency ⚫ Regulated Outputs ⚫ Remote On/Off ⚫ Fully Protected (OTP/OCP/OVP/UVLO) ⚫ 3000Vdc I/O Isolation ⚫ Operating Case Temperature -40 to +105℃ ⚫ Eighth Brick Size Meet Industrial Standard 2.45”x1.05”x0.5” ⚫ CB Test Certificate

文件：1.01649 Mbytes 页数：11 Pages

CINCON

幸康电子

N-Channel Enhancement Mode Field Transistor

FEATURES ■ 120V, 10A, RDS(ON) = 120mΩ @VGS = 5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ TO-220 & TO-263 package.

文件：498.1 Kbytes 页数：5 Pages

CET

华瑞

N-Channel Enhancement Mode Field Transistor

FEATURES ■ 120V, 10A, RDS(ON) = 120mΩ @VGS = 5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ TO-220 & TO-263 package.

文件：497.34 Kbytes 页数：5 Pages

CET

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ​​​​​​​■ TO-220 & TO-263 & TO-262 package & TO-220F full-pak for through hole.

文件：87.64 Kbytes 页数：4 Pages

CET

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 & TO-262 package & TO-220F full-pak for through hole. Lead free product is acquired.

文件：875.51 Kbytes 页数：4 Pages

CET-MOS

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired.

文件：627.14 Kbytes 页数：4 Pages

CET-MOS

华瑞