首页 >CEB>规格书列表

型号下载 订购功能描述制造商 上传企业LOGO

CEB02N6A

N-Channel Enhancement Mode Field Effect Transistor

N-Channel Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 & TO-262 package & TO-220F full-pak for through hole. Lead free product is acquired.

文件:125.19 Kbytes 页数:4 Pages

CET

华瑞

CEB02N6G

N-Channel Enhancement Mode Field Effect Transistor

FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired.

文件:599.54 Kbytes 页数:4 Pages

CET-MOS

华瑞

CEB02N6G

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired.

文件:398.08 Kbytes 页数:4 Pages

CET

华瑞

CEB02N7

N-Channel Enhancement Mode Field Effect Transistor

N-Channel Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 & TO-262 package & TO-220F full-pak for through hole. Lead free product is acquired.

文件:134.8 Kbytes 页数:4 Pages

CET

华瑞

CEB02N7G

N-Channel Enhancement Mode Field Effect Transistor

N-Channel Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired.

文件:403.86 Kbytes 页数:4 Pages

CET

华瑞

CEB02N7G

N-Channel Enhancement Mode Field Effect Transistor

FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired.

文件:625.85 Kbytes 页数:4 Pages

CET-MOS

华瑞

CEB02N9

N-Channel Enhancement Mode Field Effect Transistor

FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. RoHS compliant.

文件:623.18 Kbytes 页数:4 Pages

CET-MOS

华瑞

CEB03N100

N-Channel Enhancement Mode Field Effect Transistor

FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Pb-free lead plating ; RoHS compliant. Halogen Free.

文件:518.78 Kbytes 页数:5 Pages

CET-MOS

华瑞

CEB03N8

N-Channel Enhancement Mode Field Effect Transistor

FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant.

文件:444.05 Kbytes 页数:4 Pages

CET-MOS

华瑞

CEB04N100

N-Channel Enhancement Mode Field Effect Transistor

FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. RoHS compliant.

文件:497.84 Kbytes 页数:5 Pages

CET-MOS

华瑞

晶体管资料

  • 型号:

    BF297

  • 别名:

    三极管、晶体管、晶体三极管

  • 生产厂家:

  • 制作材料:

    Si-NPN

  • 性质:

    视频输出 (Vid)

  • 封装形式:

    直插封装

  • 极限工作电压:

    160V

  • 最大电流允许值:

    0.1A

  • 最大工作频率:

    95MHZ

  • 引脚数:

    3

  • 可代换的型号:

    BF257,BF258,BF259,BF336,BF657,BFT57,BFT58,BFT59,2N5059,3DG180K,

  • 最大耗散功率:

    0.625W

  • 放大倍数:

  • 图片代号:

    A-23

  • vtest:

    160

  • htest:

    95000000

  • atest:

    0.1

  • wtest:

    0.625

供应商型号品牌批号封装库存备注价格
HGF
23+
TO-92
7600
专注配单,只做原装进口现货
询价
HGF
25+
TO-92
50000
原装正品,假一罚十!
询价
Infineon/英飞凌
24+
SOT143
8200
公司现货库存,支持实单
询价
23+
2482
询价
JXK/杰信科
23+
TO-92
1999998
原厂授权代理,海外优势订货渠道。可提供大量库存,详
询价
BRIGHT
24+
TSOP
6200
询价
BRIGHT
06+
TSOP
1000
全新原装 绝对有货
询价
BRIGHT
24+
N/A
13523
公司原厂原装现货假一罚十!特价出售!强势库存!
询价
BRIGHT
2025+
TSOP
3715
全新原厂原装产品、公司现货销售
询价
ROHM/罗姆
22+
SOT23-5
8000
原装正品支持实单
询价
更多CEB供应商 更新时间2025-12-18 15:01:00