CEB03N100说明书PDF资料供应价格华瑞-114ic电子网

首页 >CEB03N100>规格书列表

型号	下载订购	功能描述	制造商上传企业	LOGO
CEB03N100	文件：518.78 Kbytes Page：5 Pages	N-Channel Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Pb-free lead plating ; RoHS compliant. Halogen Free. 文件：518.78 Kbytes 页数：5 Pages	CET-MOS 华瑞	CET-MOS
CEB03N100	文件：300 bytes Page：1 Pages	N Channel MOSFET	CET 华瑞	CET
CED03N100	文件：434.23 Kbytes Page：5 Pages	N-Channel Enhancement Mode Field Effect Transistor FEATURES 1000V, 3A, RDS(ON) = 6W @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. Pb-free lead plating ; RoHS compliant. Halogen Free. 文件：434.23 Kbytes 页数：5 Pages	CET-MOS 华瑞	CET-MOS
CEF03N100	文件：518.78 Kbytes Page：5 Pages	N-Channel Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Pb-free lead plating ; RoHS compliant. Halogen Free. 文件：518.78 Kbytes 页数：5 Pages	CET-MOS 华瑞	CET-MOS
CEP03N100	文件：518.78 Kbytes Page：5 Pages	N-Channel Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Pb-free lead plating ; RoHS compliant. Halogen Free. 文件：518.78 Kbytes 页数：5 Pages	CET-MOS 华瑞	CET-MOS

更多CEB03N100供应商更新时间2025-10-11 14:02:00