Zener Diode Single 2-Pin 18V, 2%, 500mW DO-213AA Bag

The 1N4099UR-1 through 1N4135UR-1 and 1N4614UR-1 through 1N4627UR-1 series are 500 mW, Zener voltage regulators in the axial-leaded, glass DO-213AA package. Voltages from 1.8 to 100V in 5%, 2%, and 1% tolerances are available. They are constructed with an internal metallurgical bond and JEDEC registered 1N4099 through 1N4135 and 1N4614 through 1N4627 series. \nInternal metallurgical bond. \nMax noise density 40 μV / √Hz for 6.8 V and up.\n Falls quickly to 1 μV / √Hz at lower voltages. \nJAN, JANTX, JANTXV and JANS qualifications are available per MIL-PRF-19500/435.\n RoHS complian;

Microchip

微芯科技

包装：散装 类别：分立半导体产品 二极管 - 齐纳 - 单 描述：DIODE ZENER

Microchip

微芯科技

包装：散装 类别：分立半导体产品 二极管 - 齐纳 - 单 描述：VOLTAGE REGULATOR

Microchip

微芯科技

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 40V, 40A, RDS(ON) = 10.2 mW @VGS = 10V. RDS(ON) = 16 mW @VGS = 4.5V. Super High dense cell design for extremely low RDS(ON). High power and current handing capability. RoHS compliant.

文件：666.56 Kbytes 页数：5 Pages

CET-MOS

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 40V, 47A, RDS(ON) = 10.2 mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. RoHS compliant. RDS(ON) = 13 mW @VGS = 4.5V.

文件：411.69 Kbytes 页数：5 Pages

CET-MOS

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 40V, 47A, RDS(ON) = 10.2 mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. RoHS compliant. RDS(ON) = 13 mW @VGS = 4.5V.

文件：411.69 Kbytes 页数：5 Pages

CET-MOS

华瑞