丝印：CDD；Package：SOT-23；Low Capacitance TVS Diode Array

文件：952.82 Kbytes 页数：7 Pages

LEIDITECH

雷卯电子

丝印：CDD5；Package：SOT-23；Single 3-Input Positive OR-AND Gate

1FEATURES 2• Available in the Texas Instruments NanoStar™ and NanoFree™ Packages • Supports 5-V VCC Operation • Inputs Accept Voltages to 5.5 V • Provides Down Translation to VCC • Max t pd of 5 ns at 3.3 V • Low Power Consumption, 10-μA Max ICC • ±24-mA Output Drive at 3.3 V • Input Hyste

文件：717.13 Kbytes 页数：23 Pages

TI2

德州仪器

丝印：CDD5M；Package：SOT；SINGLE 3-INPUT POSITIVE OR-AND GATE

1FEATURES • Supports 5-V VCC Operation • Inputs Accept Voltages to 5.5 V • Max tpd of 5 ns at 3.3 V • Low Power Consumption, 12.5-μA Max ICC • ±24-mA Output Drive at 3.3 V • Input Hysteresis Allows Slow Input Transition and Better Switching Noise Immunity at the Input (Vhys = 250 mV Typ a

文件：972.25 Kbytes 页数：16 Pages

TI2

德州仪器

丝印：CDD0465；Package：TO-252AA；Silicon Carbide Schottky Barrier Diode

Features  Temperature Independent Switching Behavior  High Surge Current Capability  Positive Temperature Coefficient on VF  Low Conduction Loss  Zero Reverse Recovery  High junction temperature 175 oC  Lead free in compliance with EU RoHS 2.0  Green molding compound as per IEC 612

文件：296.12 Kbytes 页数：5 Pages

PANJIT

強茂

丝印：CDD0465B；Package：TO-252AA；Silicon Carbide Schottky Barrier Diode

Features  Temperature Independent Switching Behavior  High Surge Current Capability  Competitive VF 1.3V at rated current  Low Conduction Loss  Zero Reverse Recovery  High junction temperature 175 oC  Lead free in compliance with EU RoHS 2.0  Green molding compound as per IEC 61249

文件：439.83 Kbytes 页数：5 Pages

PANJIT

強茂

丝印：CDD05120；Package：TO-252AA；Silicon Carbide Schottky Barrier Diode

Features  Temperature Independent Switching Behavior  High Surge Current Capability  Positive Temperature Coefficient on VF  Low Conduction Loss  Zero Reverse Recovery  High junction temperature 175 oC  Lead free in compliance with EU RoHS 2.0  Green molding compound as per IEC 612

文件：295.56 Kbytes 页数：5 Pages

PANJIT

強茂

丝印：CDD0665；Package：TO-252AA；Silicon Carbide Schottky Barrier Diode

Features  Temperature Independent Switching Behavior  High Surge Current Capability  Positive Temperature Coefficient on VF  Low Conduction Loss  Zero Reverse Recovery  High junction temperature 175 oC  Lead free in compliance with EU RoHS 2.0  Green molding compound as per IEC 612

文件：296.08 Kbytes 页数：5 Pages

PANJIT

強茂

丝印：CDD0665B；Package：TO-252AA；Silicon Carbide Schottky Barrier Diode

Features  Temperature Independent Switching Behavior  High Surge Current Capability  Competitive VF 1.3V at rated current  Low Conduction Loss  Zero Reverse Recovery  High junction temperature 175 oC  Lead free in compliance with EU RoHS 2.0  Green molding compound as per IEC 61249

文件：440.05 Kbytes 页数：5 Pages

PANJIT

強茂

丝印：CDD08120V；Package：TO-252AA；Silicon Carbide Schottky Barrier Diode

Features  Temperature Independent Switching Behavior  High Surge Current Capability  Positive Temperature Coefficient on VF  Low Conduction Loss  Zero Reverse Recovery  High junction temperature 175 oC  Lead free in compliance with EU RoHS 2.0  Green molding compound as per IEC 612

文件：297.26 Kbytes 页数：5 Pages

PANJIT

強茂

丝印：CDD0865；Package：TO-252AA；Silicon Carbide Schottky Barrier Diode

Features  Temperature Independent Switching Behavior  High Surge Current Capability  Positive Temperature Coefficient on VF  Low Conduction Loss  Zero Reverse Recovery  High junction temperature 175 oC  Lead free in compliance with EU RoHS 2.0  Green molding compound as per IEC 612

文件：295.98 Kbytes 页数：5 Pages

PANJIT

強茂