丝印：CDP；Package：SOD-123FL；Surface Mount Transient Voltage Suppressor Power 200W

文件：1.25369 Mbytes 页数：4 Pages

JUXING

广东钜兴电子

丝印：CDP；Package：SOD-123FL；TRANSIENT VOLTAGE SUPPRESSOR

文件：1.01244 Mbytes 页数：4 Pages

CHENDA

辰达半导体

丝印：CDP；Package：SOD123FL；Surface mount transient voltage suppressor power 200 watts

文件：438.38 Kbytes 页数：4 Pages

YFWDIODE

佑风微

丝印：CDP；Package：SOD-123FL；Surface mount transient voltage suppressor power 200 watts

文件：495.59 Kbytes 页数：4 Pages

SKTECHNOLGYSHIKE Electronics

时科广东时科微实业有限公司

丝印：CDP68HC68T1E；Package：16LdPDIP；CMOS Serial Real-Time Clock With RAM and Power Sense/Control

The CDP68HC68T1 Real-Time Clock provides a time/calendar function, a 32 byte static RAM, and a 3 wire Serial Peripheral Interface (SPI Bus). The primary function of the clock is to divide down a frequency input that can be supplied by the on-board oscillator in conjunction with an external crystal

文件：1.07861 Mbytes 页数：24 Pages

RENESAS

瑞萨

丝印：CDP68HC68T1EZ；Package：16LdPDIP；CMOS Serial Real-Time Clock With RAM and Power Sense/Control

The CDP68HC68T1 Real-Time Clock provides a time/calendar function, a 32 byte static RAM, and a 3 wire Serial Peripheral Interface (SPI Bus). The primary function of the clock is to divide down a frequency input that can be supplied by the on-board oscillator in conjunction with an external crystal

文件：1.07861 Mbytes 页数：24 Pages

RENESAS

瑞萨

丝印：CDP0465G1；Package：TO-220AC；Silicon Carbide Schottky Barrier Diode

Features  Temperature Independent Switching Behavior  High Surge Current Capability  Positive Temperature Coefficient on VF  Low Conduction Loss  Zero Reverse Recovery  High junction temperature 175 oC  Lead free in compliance with EU RoHS 2.0  Green molding compound as per IEC 612

文件：1.84206 Mbytes 页数：5 Pages

PANJIT

強茂

丝印：CDP0465GB；Package：TO-220AC；Silicon Carbide Schottky Barrier Diode

Features  Temperature Independent Switching Behavior  High Surge Current Capability  Competitive VF 1.3V at rated current  Low Conduction Loss  Zero Reverse Recovery  High junction temperature 175 oC  Lead free in compliance with EU RoHS 2.0  Green molding compound as per IEC 61249

文件：331.99 Kbytes 页数：5 Pages

PANJIT

強茂

丝印：CDP05120G1；Package：TO-220AC；Silicon Carbide Schottky Barrier Diode

Features  Temperature Independent Switching Behavior  High Surge Current Capability  Positive Temperature Coefficient on VF  Low Conduction Loss  Zero Reverse Recovery  High junction temperature 175 oC  Lead free in compliance with EU RoHS 2.0  Green molding compound as per IEC 612

文件：2.13664 Mbytes 页数：5 Pages

PANJIT

強茂

丝印：CDP0665G1；Package：TO-220AC；Silicon Carbide Schottky Barrier Diode

Features  Temperature Independent Switching Behavior  High Surge Current Capability  Positive Temperature Coefficient on VF  Low Conduction Loss  Zero Reverse Recovery  High junction temperature 175 oC  Lead free in compliance with EU RoHS 2.0  Green molding compound as per IEC 612

文件：1.72698 Mbytes 页数：5 Pages

PANJIT

強茂