丝印：CDH；Package：SC70；SN74LVC1GU04 Single Inverter Gate

1 Features 1• Available in the Texas Instruments NanoFree™ Package • Supports 5-V VCC Operation • Inputs Accept Voltages to 5.5 V • Unbuffered Output • Maximum tpd of 3.7 ns at 3.3 V • Low Power Consumption, 10-μA Maximum ICC • ±24-mA Output Drive at 3.3 V • Ioff Supports Live Insertion,

文件：2.48271 Mbytes 页数：47 Pages

TI

德州仪器

丝印：CDH；Package：SC70；SN74LVC1GU04 Single Inverter Gate

1 Features 1• Available in the Texas Instruments NanoFree™ Package • Supports 5-V VCC Operation • Inputs Accept Voltages to 5.5 V • Unbuffered Output • Maximum tpd of 3.7 ns at 3.3 V • Low Power Consumption, 10-μA Maximum ICC • ±24-mA Output Drive at 3.3 V • Ioff Supports Live Insertion,

文件：2.48271 Mbytes 页数：47 Pages

TI

德州仪器

丝印：CDH20120CCG1；Package：TO-247AD-3LD；Silicon Carbide Schottky Barrier Diode

Features  Temperature Independent Switching Behavior  High Surge Current Capability  Low Conduction Loss  Zero Reverse Recovery  High junction temperature 175 oC  Lead free in compliance with EU RoHS 2.0  Green molding compound as per IEC 61249 standard Application  PFC, UPS, PV I

文件：338.6 Kbytes 页数：5 Pages

PANJIT

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丝印：CDH20120CCG1；Package：TO-247AD-3LD；Silicon Carbide Schottky Barrier Diode

Features  Temperature Independent Switching Behavior  High Surge Current Capability  Low Conduction Loss  Zero Reverse Recovery  High junction temperature 175 oC  Lead free in compliance with EU RoHS 2.0  Green molding compound as per IEC 61249 standard  AEC-Q101 qualified

文件：371.09 Kbytes 页数：5 Pages

PANJIT

強茂

丝印：CDH20120CCGB；Package：TO-247AD-3LD；Silicon Carbide Schottky Barrier Diode

Features  Temperature Independent Switching Behavior  High Surge Current Capability  Competitive VF 1.4V at rated current  Low Conduction Loss  Zero Reverse Recovery  High junction temperature 175 oC  Lead free in compliance with EU RoHS 2.0  Green molding compound as per IEC 61249

文件：446.92 Kbytes 页数：5 Pages

PANJIT

強茂

丝印：CDH20120G1；Package：TO-247AD-2LD；Silicon Carbide Schottky Barrier Diode

Features  Temperature Independent Switching Behavior  High Surge Current Capability  Low Conduction Loss  Zero Reverse Recovery  High junction temperature 175 oC  Lead free in compliance with EU RoHS 2.0  Green molding compound as per IEC 61249 standard Application  PFC, UPS, PV I

文件：214.99 Kbytes 页数：5 Pages

PANJIT

強茂

丝印：CDH2065CCG1；Package：TO-247AD-3LD；Silicon Carbide Schottky Barrier Diode

Features  Temperature Independent Switching Behavior  High Surge Current Capability  Low Conduction Loss  Zero Reverse Recovery  High junction temperature 175 oC  Lead free in compliance with EU RoHS 2.0  Green molding compound as per IEC 61249 standard Application  PFC, UPS, PV I

文件：395.44 Kbytes 页数：5 Pages

PANJIT

強茂

丝印：CDH2065CCG1；Package：TO-247AD-3LD；Silicon Carbide Schottky Barrier Diode

Features  Temperature Independent Switching Behavior  High Surge Current Capability  Low Conduction Loss  Zero Reverse Recovery  High junction temperature 175 oC  Lead free in compliance with EU RoHS 2.0  Green molding compound as per IEC 61249 standard  AEC-Q101 qualified

文件：428.36 Kbytes 页数：5 Pages

PANJIT

強茂

丝印：CDH2065CCGB；Package：TO-247AD-3LD；Silicon Carbide Schottky Barrier Diode

Features  Temperature Independent Switching Behavior  High Surge Current Capability  Competitive VF 1.3V at rated current  Low Conduction Loss  Zero Reverse Recovery  High junction temperature 175 oC  Lead free in compliance with EU RoHS 2.0  Green molding compound as per IEC 61249

文件：431.21 Kbytes 页数：5 Pages

PANJIT

強茂

丝印：CDH2065CCGC；Package：TO-247AD-3LD；Silicon Carbide Schottky Barrier Diode

Features  Temperature Independent Switching Behavior  High Surge Current Capability  Low Switching Loss  Zero Reverse Recovery  High junction temperature 175 oC  Lead free in compliance with EU RoHS 2.0  Green molding compound as per IEC 61249 standard Application  PFC, UPS, PV

文件：426.3 Kbytes 页数：5 Pages

PANJIT

強茂