PCDD10120G1

Marking：CDD10120；Package：TO-252AA；Silicon Carbide Schottky Barrier Diode

Features TemperatureIndependentSwitchingBehavior HighSurgeCurrentCapability PositiveTemperatureCoefficientonVF LowConductionLoss ZeroReverseRecovery Highjunctiontemperature175oC LeadfreeincompliancewithEURoHS2.0 GreenmoldingcompoundasperIEC612

PCDD1065G1

Marking：CDD1065；Package：TO-252AA；Silicon Carbide Schottky Barrier Diode

Features TemperatureIndependentSwitchingBehavior HighSurgeCurrentCapability PositiveTemperatureCoefficientonVF LowConductionLoss ZeroReverseRecovery Highjunctiontemperature175oC LeadfreeincompliancewithEURoHS2.0 GreenmoldingcompoundasperIEC612

PCDD1065GB

Marking：CDD1065B；Package：TO-252AA；Silicon Carbide Schottky Barrier Diode

Features TemperatureIndependentSwitchingBehavior HighSurgeCurrentCapability CompetitiveVF1.3Vatratedcurrent LowConductionLoss ZeroReverseRecovery Highjunctiontemperature175oC LeadfreeincompliancewithEURoHS2.0 GreenmoldingcompoundasperIEC61249

SN74LVC1G3208DBVR

Marking：CDD5；Package：SOT-23；Single 3-Input Positive OR-AND Gate

FEATURES •AvailableintheTexasInstrumentsNanoStar™ andNanoFree™Packages •Supports5-VVCCOperation •InputsAcceptVoltagesto5.5V •ProvidesDownTranslationtoVCC•Maxtpdof5nsat3.3V •LowPowerConsumption,10-μAMaxICC •±24-mAOutputDriveat3.3V •InputHystere

SN74LVC1G3208DBVT

Marking：CDD5；Package：SOT-23；Single 3-Input Positive OR-AND Gate

FEATURES •AvailableintheTexasInstrumentsNanoStar™ andNanoFree™Packages •Supports5-VVCCOperation •InputsAcceptVoltagesto5.5V •ProvidesDownTranslationtoVCC•Maxtpdof5nsat3.3V •LowPowerConsumption,10-μAMaxICC •±24-mAOutputDriveat3.3V •InputHystere

V62SLASH13605-01XE

Marking：CDD5M；Package：SOT；SINGLE 3-INPUT POSITIVE OR-AND GATE

1FEATURES •Supports5-VVCCOperation •InputsAcceptVoltagesto5.5V •Maxtpdof5nsat3.3V •LowPowerConsumption,12.5-μAMaxICC •±24-mAOutputDriveat3.3V •InputHysteresisAllowsSlowInputTransition andBetterSwitchingNoiseImmunityatthe Input (Vhys=250mVTypa