首页 >CD4060逻辑IC>规格书列表
零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
---|---|---|---|---|
N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■60V,17A,RDS(ON)=85mΩ@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■TO-220&TO-263package. ■Leadfreeproductisacquired. | CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | CET | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES 60V,17A,RDS(ON)=85mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. Leadfreeproductisacquired. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES 60V,17A,RDS(ON)=75mW@VGS=10V. RDS(ON)=90mW@VGS=5.0V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. Leadfreeproductisacquired. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■60V,17A,RDS(ON)=75mΩ@VGS=10V. RDS(ON)=90mΩ@VGS=5.0V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■TO-220&TO-263package. ■Leadfreeproductisacquired. | CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | CET | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES •60V,15A,RDS(ON)=85mΩ@VGS=10V. •SuperhighdensecelldesignforextremelylowRDS(ON) •Highpowerandcurrenthandlingcapability. •TO-220&TO-263package. | CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | CET | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■60V,15A,RDS(ON)=90mΩ@VGS=10V. RDS(ON)=100mΩ@VGS=5.0V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■TO-220&TO-263package. | CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | CET | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■60V,15A,RDS(ON)=85mΩ@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package. | CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | CET | ||
N-ChannelEnhancementModeFieldEffectTransistor | CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | CET | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES 60V,15A,RDS(ON)=85mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. Leadfreeproductisacquired. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES 60V,16A,RDS(ON)=75mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RDS(ON)=90mW@VGS=5V. Leadfreeproductisacquired. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
N-ChannelEnhancementModeFieldEffectTransistor | CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | CET | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■60V,15A,RDS(ON)=80mΩ@VGS=10V. RDS(ON)=95mΩ@VGS=5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package. | CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | CET | ||
N-Channel60V(D-S)MOSFET | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体(台湾)有限公司 | VBSEMI | ||
40AHighPowerSchottkyBarrierRectifier | ||||
N-ChannelEnhancementModeFieldEffectTransistor VOLTAGE60VoltsCURRENT15Ampere FEATURE *Smallpackage.(TO-252A) *SuperhighdensecelldesignforextremelylowRDS(ON). *Highpowerandcurrenthandingcapability. APPLICATION *Servomotorcontrol. *PowerMOSFETgatedrivers. *Otherswitchingapplications. | CHENMKOCHENMKO CHENMKO | CHENMKO | ||
SuperLowBarrierHighVoltagePowerRectifier | ||||
PWMControl2AStep-DownConverter FEATURES -2AOutputCurrent -Upto95Efficiency -4.75Vto18VInputRange -20μAShutdownSupplyCurrent -360kHzSwitchingFrequency -AdjustableOutputVoltagefrom1.22Vto0.85·VIN -Cycle-by-CycleCurrentLimitProtection -ThermalShutdownProtection -FrequencyFoldBackatSho | SICORE SI-CORE CORP. | SICORE | ||
SURFACEMOUNTSILICONN-CHANNELENHANCEMENT-MODEMOSFET | CentralCentral Semiconductor Corp 美国中央半导体 | Central | ||
SURFACEMOUNTSILICONP-CHANNELENHANCEMENT-MODEMOSFET | CentralCentral Semiconductor Corp 美国中央半导体 | Central | ||
45VN-CHANNELENHANCEMENTMODEMOSFET | DIODESDiodes Incorporated 达尔科技 | DIODES |
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
TI/德州仪器 |
23+ |
DIP14 |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
TI/德州仪器 |
2022 |
DIP14 |
80000 |
原装现货,OEM渠道,欢迎咨询 |
询价 | ||
TI/德州仪器 |
2022+ |
UNKNOWN |
5 |
询价 | |||
MICROCHIP/微芯 |
18+ |
6958 |
询价15919799957 |
询价 | |||
NXP/恩智浦 |
2021+ |
SO-8(M) |
1000 |
13632880263 |
询价 | ||
TI |
2339+ |
DIP |
5650 |
公司原厂原装现货假一罚十!特价出售!强势库存! |
询价 | ||
RCA |
2020+ |
DIP16 |
4500 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
询价 | ||
TI |
2022 |
DIP |
1520 |
原厂原装正品,价格超越代理 |
询价 | ||
NULL |
2023+ |
NULL |
8700 |
原装现货 |
询价 | ||
TI/德州仪器 |
22+ |
SOP5.2 |
3000 |
一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、 |
询价 |
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