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CP273

PowerTransistorNPN-SiliconPowerTransistorChip

PROCESSDETAILS DieSize68x68MILS DieThickness8.5MILS±0.6MILS BaseBondingPadArea17.7x10.2MILS EmitterBondingPadArea18.1x8.9MILS TopSideMetalizationAl-30,000Å BackSideMetalizationAg-14,000Å

CentralCentral Semiconductor Corp

美国中央半导体

EA273WMI-BK

NECLCD27DesktopDisplay

NECRenesas Electronics America

瑞萨日本瑞萨电子株式会社

EZTI273VF

DO-35Case

ETCList of Unclassifed Manufacturers

未分类制造商

F273-CEG-P

16-bitMCUwith512KbyteFlashmemoryand36KbyteRAM

Introduction TheST10F273EdeviceisaderivativeoftheSTMicroelectronicsST10familyof16-bitsingle-chipCMOSmicrocontrollers. TheST10F273EcombineshighCPUperformance(upto32millioninstructionspersecond)withhighperipheralfunctionalityandenhancedI/O-capabilities.Itals

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

F273-CEG-P-TR

16-bitMCUwith512KbyteFlashmemoryand36KbyteRAM

Introduction TheST10F273EdeviceisaderivativeoftheSTMicroelectronicsST10familyof16-bitsingle-chipCMOSmicrocontrollers. TheST10F273EcombineshighCPUperformance(upto32millioninstructionspersecond)withhighperipheralfunctionalityandenhancedI/O-capabilities.Itals

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

F273-CEG-T

16-bitMCUwith512KbyteFlashmemoryand36KbyteRAM

Introduction TheST10F273EdeviceisaderivativeoftheSTMicroelectronicsST10familyof16-bitsingle-chipCMOSmicrocontrollers. TheST10F273EcombineshighCPUperformance(upto32millioninstructionspersecond)withhighperipheralfunctionalityandenhancedI/O-capabilities.Itals

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

F273-CEG-T-TR

16-bitMCUwith512KbyteFlashmemoryand36KbyteRAM

Introduction TheST10F273EdeviceisaderivativeoftheSTMicroelectronicsST10familyof16-bitsingle-chipCMOSmicrocontrollers. TheST10F273EcombineshighCPUperformance(upto32millioninstructionspersecond)withhighperipheralfunctionalityandenhancedI/O-capabilities.Itals

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

F-273U

ChassisMountSingleSecondary

TRIAD

TRIAD MAGNETICS

FSD273

SILICONLOWVOLTAGEHYPERABRUPTVARACTORDIODES

DeviceDescription Arangeofsiliconvaractordiodesforuseinfrequencycontrolandfiltering.FeaturingcloselycontrolledCVcharacteristics,lowvoltageoperationandhighQ.Lowreversecurrentensuresverylowphasenoiseperformance.Thesepartscanbeusedwithcontrolvoltagesfrom0

ZetexZetex Semiconductors

捷特科半导体

FSD273TA

SILICONLOWVOLTAGEHYPERABRUPTVARACTORDIODES

DeviceDescription Arangeofsiliconvaractordiodesforuseinfrequencycontrolandfiltering.FeaturingcloselycontrolledCVcharacteristics,lowvoltageoperationandhighQ.Lowreversecurrentensuresverylowphasenoiseperformance.Thesepartscanbeusedwithcontrolvoltagesfrom0

ZetexZetex Semiconductors

捷特科半导体

FSS273

N-ChannelSiliconMOSFETGeneral-PurposeSwitchingDevice

General-PurposeSwitchingDeviceApplications Features •Motordriveapplications. •Inverterdriveapplications. •4Vdrive.

SANYOSanyo

三洋三洋电机株式会社

HB273

OCTALD-TYPEFLIP-FLOPSWITHCLEAR

TITexas Instruments

德州仪器美国德州仪器公司

HC273

OctalDFlip-FlopwithCommonClockandReset

TheSL74HC273isidenticalinpinouttotheLS/ALS273.ThedeviceinputsarecompatiblewithstandardCMOSoutputs;withpullupresistors,theyarecompatiblewithLS/ALSTTLoutputs.ThisdeviceconsistsofeightDflip-flopswithcommonClockandResetinputs.Eachflip-flopisloadedwithalow-

SLS

System Logic Semiconductor

HCPL-273L

LowInputCurrentHighGainLVTTL/LVCMOSCompatible3.3VOptocouplers

Description ThesehighgainseriescouplersuseaLightEmittingDiodeandanintegratedhighgainphotodetectortoprovideextremelyhighcurrenttransferratiobetweeninputandoutput. Features •Lowpowerconsumption •Highcurrenttransferratio •Lowinputcurrentrequirements–

HPAgilent(Hewlett-Packard)

安捷伦科技安捷伦科技有限公司

HCPL-273L

LowInputCurrent,HighGain,LVTTL/LVCMOSCompatbieOptocouplers

Description ThesehighgainseriescouplersuseaLightEmittingDiodeandanintegratedhighgainphotodetectortoprovideextremelyhighcurrenttransferratiobetweeninputandoutput. Features •3.3V/5VDualSupplyVoltages •Lowpowerconsumption •Highcurrenttransferratio •Low

AVAGOAVAGO TECHNOLOGIES LIMITED

安华高

HCPL-273L

LowInputCurrent,HighGain,LVTTL/LVCMOSCompatibleOptocouplers

Description ThesehighgainseriescouplersuseaLightEmittingDiodeandanintegratedhighgainphotodetectortoprovideextremelyhighcurrenttransferratiobetweeninputandoutput. Features •3.3V/5VDualSupplyVoltages •Lowpowerconsumption •Highcurrenttransferratio •Low

AVAGOAVAGO TECHNOLOGIES LIMITED

安华高

HCS273D

RadiationHardenedOctalDFlip-Flop

Description TheIntersilHCS273MSisaRadiationHardenedoctalDflip-flop,positiveedgetriggered,withreset. TheHCS273MSutilizesadvancedCMOS/SOStechnologytoachievehigh-speedoperation.Thisdeviceisamemberofradiationhardened,high-speed,CMOS/SOSLogicFamily. TheHCS273MSis

Intersil

Intersil Corporation

HCS273D

RadiationHardenedOctalDFlip-Flop

Features •3MicronRadiationHardenedCMOSSOS •TotalDose200KRAD(Si) •SEPEffectiveLETNoUpsets:>100MEV-cm2/mg •SingleEventUpset(SEU)Immunity1x1012RAD(Si)/s •DoseRateUpset>1010RAD(Si)/s20nsPulse •Lat

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

HCS273DMSR

RadiationHardenedOctalDFlip-Flop

Description TheIntersilHCS273MSisaRadiationHardenedoctalDflip-flop,positiveedgetriggered,withreset. TheHCS273MSutilizesadvancedCMOS/SOStechnologytoachievehigh-speedoperation.Thisdeviceisamemberofradiationhardened,high-speed,CMOS/SOSLogicFamily. TheHCS273MSis

Intersil

Intersil Corporation

HCS273DMSR

RadiationHardenedOctalDFlip-Flop

Features •3MicronRadiationHardenedCMOSSOS •TotalDose200KRAD(Si) •SEPEffectiveLETNoUpsets:>100MEV-cm2/mg •SingleEventUpset(SEU)Immunity1x1012RAD(Si)/s •DoseRateUpset>1010RAD(Si)/s20nsPulse •Lat

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

供应商型号品牌批号封装库存备注价格
BOURNS/伯恩斯
23+
AN
6500
专注配单,只做原装进口现货
询价
BOURNS/伯恩斯
23+
AN
6500
专注配单,只做原装进口现货
询价
Phoenix/菲尼克斯
23/24+
3240364
11978
优势特价 原装正品 全产品线技术支持
询价
更多CD-HD273供应商 更新时间2024-9-24 15:00:00