丝印：C5D；Package：TSOT26；COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET

Features Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage ESD Protected Gate on N-Channel (>6kV Human Body Model) Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards f

文件：466.12 Kbytes 页数：11 Pages

DIODES

美台半导体

丝印：C5D；Package：TSOT26；COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET

Features Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage ESD Protected Gate on N-Channel (>6kV Human Body Model) Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards f

文件：466.12 Kbytes 页数：11 Pages

DIODES

美台半导体

丝印：C5D05170；Package：TO-247-2；Silicon Carbide Schottky Diode

文件：618.91 Kbytes 页数：6 Pages

Cree

科锐

丝印：C5D10170；Package：TO-247-2；Silicon Carbide Schottky Diode Z-Rec Rectifier

文件：613.19 Kbytes 页数：6 Pages

Cree

科锐

丝印：C5D25170；Package：TO-247-2；Silicon Carbide Schottky Diode

文件：612.93 Kbytes 页数：6 Pages

Cree

科锐

丝印：C5D05170；Package：TO-247-2；Silicon Carbide Schottky Diode

文件：618.91 Kbytes 页数：6 Pages

Cree

科锐

丝印：C5D10170；Package：TO-247-2；Silicon Carbide Schottky Diode Z-Rec Rectifier

文件：613.19 Kbytes 页数：6 Pages

Cree

科锐

丝印：C5D25170；Package：TO-247-2；Silicon Carbide Schottky Diode

文件：612.93 Kbytes 页数：6 Pages

Cree

科锐

Silicon Carbide Schottky Diode

FEATURES · Zero Reverse Recovery Current · High-speed Switching Possible · Extremely Fast Switching APPLICATIONS · Higher Efficiency · Reduction of Heat Sink Requirements · Essentially No Switching Losses

文件：368.47 Kbytes 页数：2 Pages

ISC

无锡固电

Silicon Carbide Schottky Diode

文件：981.49 Kbytes 页数：6 Pages

Cree

科锐