NPN TRIPLE DIFFUSED(FOR POWER AMPLIFIER APLLICATIONS)

Power Amplifier Applications • High Collector breakdown voltage: VCEO= 230 V (min) • Complementary to 2SA1962 • Suitable fro use in 80-W high fidelity audio amplifier’s output stage

文件：150.92 Kbytes 页数：2 Pages

TOSHIBA

东芝

Silicon NPN Triple Diffused Type Power Amplifier Applications

文件：122.03 Kbytes 页数：4 Pages

TOSHIBA

东芝

丝印：C5242；NPN TRIPLE DIFFUSED(FOR POWER AMPLIFIER APLLICATIONS)

Power Amplifier Applications • High Collector breakdown voltage: VCEO= 230 V (min) • Complementary to 2SA1962 • Suitable fro use in 80-W high fidelity audio amplifier’s output stage

文件：150.92 Kbytes 页数：2 Pages

TOSHIBA

东芝

丝印：C5242O；Package：TO-3P；NPN Epitaxial Silicon Transistor

文件：475.12 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

丝印：C5242R；Package：TO-3P；NPN Epitaxial Silicon Transistor

文件：475.12 Kbytes 页数：8 Pages

ONSEMI

安森美半导体