CERAMIC MOLDED/AXIAL & RADIAL - STANDARD

文件：140.69 Kbytes 页数：10 Pages

KEMETKEMET Corporation

基美

CERAMIC MOLDED/AXIAL & RADIAL - STANDARD

文件：140.69 Kbytes 页数：10 Pages

KEMETKEMET Corporation

基美

CERAMIC MOLDED/AXIAL & RADIAL - STANDARD

文件：140.69 Kbytes 页数：10 Pages

KEMETKEMET Corporation

基美

CERAMIC MOLDED/AXIAL & RADIAL - STANDARD

文件：140.69 Kbytes 页数：10 Pages

KEMETKEMET Corporation

基美

GTO轴向吸收电容器

DIN

尚鼎芯

丝印：C5200O；Package：TO-264；NPN Epitaxial Silicon Transistor

Features • High Current Capability: IC = 17A. • High Power Dissipation : 150watts. • High Frequency : 30MHz. • High Voltage : VCEO=250V • Wide S.O.A for reliable operation. • Excellent Gain Linearity for low THD. • Complement to 2SA1943/FJL4215. • Thermal and electrical Spice models are av

文件：238.11 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

丝印：C5200R；Package：TO-264；NPN Epitaxial Silicon Transistor

Features • High Current Capability: IC = 17A. • High Power Dissipation : 150watts. • High Frequency : 30MHz. • High Voltage : VCEO=250V • Wide S.O.A for reliable operation. • Excellent Gain Linearity for low THD. • Complement to 2SA1943/FJL4215. • Thermal and electrical Spice models are av

文件：238.11 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

丝印：C5242；NPN TRIPLE DIFFUSED(FOR POWER AMPLIFIER APLLICATIONS)

Power Amplifier Applications • High Collector breakdown voltage: VCEO= 230 V (min) • Complementary to 2SA1962 • Suitable fro use in 80-W high fidelity audio amplifier’s output stage

文件：150.92 Kbytes 页数：2 Pages

TOSHIBA

东芝

丝印：C5242O；Package：TO-3P；NPN Epitaxial Silicon Transistor

文件：475.12 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

丝印：C5242R；Package：TO-3P；NPN Epitaxial Silicon Transistor

文件：475.12 Kbytes 页数：8 Pages

ONSEMI

安森美半导体