Power GaN transistor

500 W GaN packaged asymmetric Doherty power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. • Excellent digital pre-distortion capability\n• High efficiency\n• Designed for broadband operation\n• Lower output capacitance for improved performance in Doherty applications\n• Internally matched for ease of use;

Ampleon

安谱隆

Power GaN transistor

500 W GaN packaged asymmetric Doherty power transistor for base station applications at frequencies from 2110 MHz to 2170 MHz. • Excellent digital pre-distortion capability\n• High efficiency\n• Designed for broadband operation\n• Lower output capacitance for improved performance in Doherty applications\n• Internally matched for ease of use;

Ampleon

安谱隆

Power GaN transistor

100 W GaN packaged Doherty power transistor for base station applications at frequencies from 2300 MHz to 2700 MHz. • Excellent digital pre-distortion capability\n• High efficiency\n• Designed for broadband operation\n• Lower output capacitance for improved performance in Doherty applications\n• Internally matched for ease of use\n• For RoHS compliance see the product details on the Ampleon website;

Ampleon

安谱隆

Package：SOT-1273-1；包装：托盘 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：C4H18W500AY/SOT1273/REELD

Ampleon USA Inc.

Package：SOT-1273-1；包装：托盘 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：C4H18W500AZ/SOT1273/TRAYD

Ampleon USA Inc.

Package：SOT-1273-1；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：C4H22W500AY/SOT1273/REELD

Ampleon USA Inc.