C4H22W500A中文资料Power GaN transistor数据手册Ampleon规格书

描述 Description

500 W GaN packaged asymmetric Doherty power transistor for base station applications at frequencies from 2110 MHz to 2170 MHz.

特性 Features

• Excellent digital pre-distortion capability
• High efficiency
• Designed for broadband operation
• Lower output capacitance for improved performance in Doherty applications
• Internally matched for ease of use

应用 Application

• RF power amplifier for base stations and multi carrier applications in the 2110 MHz to 2170 MHz frequency range