C4H2327N110A数据手册分立半导体产品的晶体管-FETMOSFET-射频规格书PDF

描述 Description

100 W GaN packaged Doherty power transistor for base station applications at frequencies from 2300 MHz to 2700 MHz.

特性 Features

• Excellent digital pre-distortion capability
• High efficiency
• Designed for broadband operation
• Lower output capacitance for improved performance in Doherty applications
• Internally matched for ease of use
• For RoHS compliance see the product details on the Ampleon website

应用 Application

• RF power amplifier for base stations and multi carrier applications in the 2300 MHz to 2700 MHz frequency range

简介

C4H2327N110A属于分立半导体产品的晶体管-FETMOSFET-射频。由制造生产的C4H2327N110A晶体管 - FET，MOSFET - 射频射频晶体管、FET 和 MOSFET 是具有三个端子的半导体器件，器件中电流受电场控制。该系列器件用于涉及射频的设备。用于放大或切换信号或功率的晶体管类型包括：E-pHEMT、LDMOS、MESFET、N 沟道、P 沟道、pHEMT、碳化硅、2 N 沟道和 4 N 沟道。