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MAZ4160N

Siliconplanartype

Siliconplanartype Forstabilizationofpowersupply ■Features •Extremelylownoisevoltagecausedfromdiode(1/3to1/10ofourconventionalMAZ4000series) •Extremelygoodrisingperformance(inthelow-currentrange) •Easy-to-identifythezener-voltagerankbythecolorbands •Easy

PanasonicPanasonic Corporation

松下松下电器

MAZ4160N

Siliconplanartype

PanasonicPanasonic Corporation

松下松下电器

MAZ4160N-H

Siliconplanartype

Siliconplanartype Forstabilizationofpowersupply ■Features •Extremelylownoisevoltagecausedfromdiode(1/3to1/10ofourconventionalMAZ4000series) •Extremelygoodrisingperformance(inthelow-currentrange) •Easy-to-identifythezener-voltagerankbythecolorbands •Easy

PanasonicPanasonic Corporation

松下松下电器

MAZ4160N-L

Siliconplanartype

Siliconplanartype Forstabilizationofpowersupply ■Features •Extremelylownoisevoltagecausedfromdiode(1/3to1/10ofourconventionalMAZ4000series) •Extremelygoodrisingperformance(inthelow-currentrange) •Easy-to-identifythezener-voltagerankbythecolorbands •Easy

PanasonicPanasonic Corporation

松下松下电器

MAZ4160N-M

Siliconplanartype

Siliconplanartype Forstabilizationofpowersupply ■Features •Extremelylownoisevoltagecausedfromdiode(1/3to1/10ofourconventionalMAZ4000series) •Extremelygoodrisingperformance(inthelow-currentrange) •Easy-to-identifythezener-voltagerankbythecolorbands •Easy

PanasonicPanasonic Corporation

松下松下电器

MTLB4160-HR

Marktech0.53LightBarLEDs

FEATURES •0.53lightbar •Suitableforbacklighting •Uniformlightemission

Marktech

Marktech Optoelectronics

MTLB4160-O

Marktech0.53LightBarLEDs

FEATURES •0.53lightbar •Suitableforbacklighting •Uniformlightemission

Marktech

Marktech Optoelectronics

NGR4160

ReliableNeutralGroundingResistors,HighCurrentGridResistors

VishayVishay Siliconix

威世科技

NJW4160

SwitchingRegulatorICforBuckConverter

NJRCNew Japan Radio

新日本无线株式会社

NS4160

ClassAB/ClassDswitching,ultra-lowEMI,nofilterrequired,5Wmonoaudioamplifier

ClassAB/ClassDworkingmodeswitchingfunction ClassAB/ClassDworkingmodeandlow-powershutdownmodearecontrolledbyone-linepulse,savingthemaincontrolGPIO 5Woutputpower 0.1THD(1Woutputpower,5Vpowersupply) Excellentfull-bandwidthEMIsuppressioncapability E

NSIWAYShenzhen Naxinwei Technology Co., Ltd.

纳芯威科技深圳市纳芯威科技有限公司

NSL-4160

TO-18PhotocellsHermeticPackage

SILONEX

Luna Innovations Incorporated

NTJS4160N

HighEfficiencyDC-DCConverters

ONSEMION Semiconductor

安森美半导体安森美半导体公司

NTJS4160N

PowerMOSFET30V,3.2A,SingleN-Channel,SC-88

LowProfile,SmallFootprintPackaging ONSemiconductoroffersthelatestinlow-profile,small-outlinepackaging.Weenablethedesignandproductionofultra-thinend-userproductsfortheconsumermarket,bymanufacturingsomeofthelowestprofilepackagingavailableintheworld,invastvol

ONSEMION Semiconductor

安森美半导体安森美半导体公司

PBSS4160DPN

60V,1ANPN/PNPlowVCEsat(BISS)transistor

Generaldescription NPN/PNPlowVCEsat(BISS)transistorpairinaSOT457(SC-74)plasticpackage. Features ■Lowcollector-emittersaturationvoltageVCEsat ■HighcollectorcurrentcapabilityICandICM ■Highefficiency,reducesheatgeneration ■Reducesprinted-circuitboardarearequire

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

PBSS4160DPN

60V,1ANPN/PNPlowVCEsat(BISS)transistor

Features *Lowcollector-emittersaturationvoltageVCEsat *Highcollectorcurrentcapability:ICandICM *Highcollectorcurrentgain(hFE)athighIC *Highefficiencyduetolessheatgeneration *SmallerrequiredPrinted-CircuitBoard(PCB)areathanforconventionaltransistors

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

PBSS4160DS

60V,1ANPN/NPNlowVCEsat(BISS)transistor

Features *Lowcollector-emittersaturationvoltageVCEsat *Highcollectorcurrentcapability:ICandICM *Highcollectorcurrentgain(hFE)athighIC *Highefficiencyduetolessheatgeneration *SmallerrequiredPrinted-CircuitBoard(PCB)areathanforconventionaltransistors

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

PBSS4160DS

60V1ANPN/NPNlowVCEsat(BISS)transistor

Generaldescription NPN/NPNlowVCEsatBreakthroughinSmallSignal(BISS)transistorpairinaSOT457(SC-74)SurfaceMountedDevice(SMD)plasticpackage. PNPcomplement:PBSS5160DS. Features ■Lowcollector-emittersaturationvoltageVCEsat ■Highcollectorcurrentcapability:ICandICM

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

PBSS4160PAN

60V,1ANPN/NPNlowVCEsat(BISS)transistor

1.Generaldescription NPN/NPNlowVCEsatBreakthroughInSmallSignal(BISS)transistorinaleadless mediumpowerDFN2020-6(SOT1118)Surface-MountedDevice(SMD)plasticpackage. NPN/PNPcomplement:PBSS4160PANP.PNP/PNPcomplement:PBSS5160PAP. 2.Featuresandbenefits •Verylowcollec

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

PBSS4160PAN

60V,1ANPN/NPNlowVCEsat(BISS)transistor

Generaldescription NPN/NPNlowVCEsatBreakthroughInSmallSignal(BISS)transistorinaleadlessmediumpowerDFN2020-6(SOT1118)Surface-MountedDevice(SMD)plasticpackage. NPN/PNPcomplement:PBSS4160PANP.PNP/PNPcomplement:PBSS5160PAP. Featuresandbenefits •Verylowcollector-emitt

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

PBSS4160PANP

60V,1ANPN/PNPlowVCEsat(BISS)transistor

Generaldescription NPN/PNPlowVCEsatBreakthroughInSmallSignal(BISS)transistorinaleadlessmediumpowerDFN2020-6(SOT1118)Surface-MountedDevice(SMD)plasticpackage. NPN/NPNcomplement:PBSS4160PAN.PNP/PNPcomplement:PBSS5160PAP. Featuresandbenefits •Verylowcollector-emitte

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

晶体管资料

  • 型号:

    C4160

  • 别名:

    三极管、晶体管、晶体三极管

  • 生产厂家:

  • 制作材料:

    Si-NPN

  • 性质:

    通用型 (Uni)

  • 封装形式:

  • 极限工作电压:

    50V

  • 最大电流允许值:

    0.2A

  • 最大工作频率:

    250MHZ

  • 引脚数:

  • 可代换的型号:

    BC237,

  • 最大耗散功率:

    0.3W

  • 放大倍数:

    β=500

  • 图片代号:

    NO

  • vtest:

    50

  • htest:

    250000000

  • atest:

    .2

  • wtest:

    .3

供应商型号品牌批号封装库存备注价格
SANYO
23+
TO-TO-220
53200
全新原装真实库存含13点增值税票!
询价
SANYO/三洋
23+
TO-220
10000
公司只做原装正品
询价
SANYO/三洋
22+
TO-220
6000
十年配单,只做原装
询价
22+
TO220
500000
行业低价,代理渠道
询价
SANYO/三洋
23+
TO-220
6000
原装正品,支持实单
询价
SANYO/三洋
22+
TO-220
25000
只做原装进口现货,专注配单
询价
SANYO/三洋
1926+
TO-220F
6852
只做原装正品现货!或订货假一赔十!
询价
SANYO/三洋
23+
01+
6500
专注配单,只做原装进口现货
询价
ONE-CHIP
18+
TSSOP
85600
保证进口原装可开17%增值税发票
询价
TSSOP54
23+
0426
3500
询价
更多C4160供应商 更新时间2024-5-22 15:14:00