丝印：C009T；Package：SOT-23；N-Channel Enhancement Mode Field Effect Transistor

FEATURES - VDS=20V,RDS(ON)=40m @VGS=4.5V,ID=5.0A - VDS=20V,RDS(ON)=60m @VGS=2.5V,ID=4.0A - VDS=20V,,RDS(ON)=75m @VGS=1.8V,ID=1.0A APPLICATIONS - Power Management in Note book. - Portable Equipment. - Battery Powered System. - Load Switch. - DSC.

文件：226.4 Kbytes 页数：3 Pages

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N-Channel Enhancement Mode Field Effect Transistor

FEATURES - VDS=20V,RDS(ON)=40m @VGS=4.5V,ID=5.0A - VDS=20V,RDS(ON)=60m @VGS=2.5V,ID=4.0A - VDS=20V,,RDS(ON)=75m @VGS=1.8V,ID=1.0A APPLICATIONS - Power Management in Note book. - Portable Equipment. - Battery Powered System. - Load Switch. - DSC.

文件：226.4 Kbytes 页数：3 Pages

etc2List of Unclassifed Manufacturers

etc未分类制造商etc2未分类制造商