CG2430X1

Marking：C01；Package：TSON；0.1 to 6.0GHz SP3T Switch

BCM847QAS

Marking：C010；Package：DFN1010B-6；45 V, 100 mA NPN/NPN matched double transistors

Featuresandbenefits •Reducescomponentcount •Reducespickandplacecosts •Lowpackageheightof0.37mm •Currentgainmatching •Base-emittervoltagematching •Application-optimizedpinout •AEC-Q101qualified

BCM857QAS

Marking：C011；Package：DFN1010B-6；45 V, 100 mA PNP/PNP matched double transistors

Featuresandbenefits •Reducescomponentcount •Reducespickandplacecosts •Lowpackageheightof0.37mm •Currentgainmatching •Base-emittervoltagematching •Application-optimizedpinout •AEC-Q101qualified

TTC011B

Marking：C011B；Package：TO-126N；Bipolar Transistors Silicon NPN Epitaxial Type

Applications •PowerAmplifiers •Audio-FrequencyAmplifiers Features (1)Highcollectorvoltage:VCEO=230V(min) (2)Smallcollectoroutputcapacitance:Cob=20pF(typ.) (3)Hightransitionfrequency:fT=100MHz(typ.) (4)ComplementarytoTTA006B

TTC014

Marking：C014；Package：PW-Mold；Bipolar Transistors Silicon NPN Triple-Diffused Type

Applications •High-SpeedHigh-VoltageSwitching •SwitchingVoltageRegulators •High-SpeedDC-DCConverters Features (1)HighDCcurrentgain:hFE=100to200(IC=0.1A) (2)Highcollectorbreakdownvoltage:VCEO=800V,VCBO=900V (3)High-speedswitching:tr=0.2μs(typ.),

TTC015B

Marking：C015B；Package：TO-126N；Bipolar Transistors Silicon NPN Epitaxial Type

Applications •PowerAmplifiers •PowerSwitching Features (1)HighDCcurrentgain:hFE=100to200(IC=0.5A) (2)Lowcollectoremittersaturationvoltage:VCE(sat)=0.5V(max)(IC=1A) (3)High-speedswitching:tstg=400ns(typ.)(IC=1A) (4)ComplementarytoTTA008B

TTC016

Marking：C016；Package：PW-Mold；Bipolar Transistors Silicon NPN Epitaxial Type

Applications •High-SpeedSwitching •DC-DCConverters Features (1)HighDCcurrentgain:hFE=400to1000(IC=0.5A) (2)Lowcollectorsaturationvoltage:VCE(sat)=0.22V(max)(IC=1.6A,IB=32mA) (3)High-speedswitching:tf=95ns(typ.)

TTC017

Marking：C017；Package：PW-Mold；Bipolar Transistors Silicon NPN Epitaxial Type

Applications •PowerAmplifiers •PowerSwitching Features (1)HighDCcurrentgain:hFE=180to450(IC=0.5A) (2)Lowcollectorsaturationvoltage:VCE(sat)=0.5V(max)(IC=1A) (3)High-speedswitching:tstg=400ns(typ.)(IC=1A)

DC010NG

Marking：C010N；Package：TO-252；N-Channel MOSFET uses advanced trench technology

SC010NG

Marking：C010N；Package：SOP-8；N-Channel MOSFET uses advanced trench technology