丝印：C010；Package：DFN1010B-6；45 V, 100 mA NPN/NPN matched double transistors

Features and benefits • Reduces component count • Reduces pick and place costs • Low package height of 0.37 mm • Current gain matching • Base-emitter voltage matching • Application-optimized pinout • AEC-Q101 qualified

文件：228.48 Kbytes 页数：11 Pages

NEXPERIA

安世

丝印：C0100R；Package：VSON(DEN)；AMC0100R Precision, ±250mV Input, Functionally Isolated Amplifier With Single-Ended, Ratiometric Output

1 Features • Linear input voltage range: ±250mV • Supply voltage range: – High-side (VDD1): 3.0V to 5.5V – Low-side (VDD2): 3.0V to 5.5V • Single-ended, ratiometric output – Reference Input: 2.7V to 5.5V • Low DC errors: – Offset error: ±0.25mV (maximum) – Offset drift: ±1μV/°C (maximum)

文件：1.35314 Mbytes 页数：33 Pages

TI

德州仪器

丝印：C010N；Package：TO-252；N-Channel MOSFET uses advanced trench technology

文件：1.05589 Mbytes 页数：4 Pages

DOINGTER

杜因特

丝印：C010N；Package：SOP-8；N-Channel MOSFET uses advanced trench technology

文件：1.19168 Mbytes 页数：4 Pages

DOINGTER

杜因特

丝印：C010AJ；Package：SMC；1500W Transient Voltage Suppressor

文件：598.9 Kbytes 页数：7 Pages

WEEN

瑞能半导体

丝印：C010CJ；Package：SMC；1500W Transient Voltage Suppressor

文件：598.9 Kbytes 页数：7 Pages

WEEN

瑞能半导体

丝印：C010N；Package：DFN3*3-8；N-Channel MOSFET uses advanced trench technology

文件：1.13388 Mbytes 页数：4 Pages

DOINGTER

杜因特

丝印：C010P；Package：DNF3*3-8；P-Channel MOSFET uses advanced trench technology

文件：1.2298 Mbytes 页数：4 Pages

DOINGTER

杜因特