丝印：C010；Package：DFN1010B-6；45 V, 100 mA NPN/NPN matched double transistors

Features and benefits • Reduces component count • Reduces pick and place costs • Low package height of 0.37 mm • Current gain matching • Base-emitter voltage matching • Application-optimized pinout • AEC-Q101 qualified

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NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

45 V, 100 mA NPN/NPN matched double transistors

NPN/NPN matched double transistors in an ultra small DFN1010B-6 (SOT1216) leadless Surface-Mounted Device (SMD) plastic package.\n PNP/PNP complement: BCM857QAS • Reduces component count\n• Reduces pick and place costs\n• Low package height of 0.37 mm\n• Current gain matching\n• Base-emitter voltage matching\n• Application-optimized pinout\n• AEC-Q101 qualified;

Nexperia

安世

NPN Silicon Darlington Transistors

Eplbase power darlington transistors (62.5W) BD 643, BD 645, BD647, and BD649 are monolithic NPN Silicon epibase power darlington transistors with diode and resistors in a TO 220 AB plastic package (TOP-66). The collectors of the two transistors are electrically connected to the metallic mounting

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NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

PNP SILICON RF TRANSISTORS

文件：82.04 Kbytes 页数：3 Pages

SIEMENS

西门子

Optical receiver modules

DESCRIPTION High dynamic range optical receiver amplifier modules in a standard SOT115 package where the non-jacketed fibre has either no connector or has an FC/APC or SC/APC connector. The amplifier supply voltage pin and the photo diode bias voltage pin both connect to 24 V (DC). The mo

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PHI

飞利浦