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BUZ900

N-CHANNEL POWER MOSFET

文件:82.31 Kbytes 页数:2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

BUZ900P

N?밅HANNEL POWER MOSFET

文件:43.7 Kbytes 页数:4 Pages

SEME-LAB

BUZ901

N-channel power mosfet

文件:184.95 Kbytes 页数:4 Pages

ELEFLOW

BUZ901

N-CHANNEL POWER MOSFET

文件:82.31 Kbytes 页数:2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

BUZ901D

isc N-Channel MOSFET Transistor

文件:277.57 Kbytes 页数:2 Pages

ISC

无锡固电

BUZ90A

SEMICONDUCTORS

文件:2.43533 Mbytes 页数:31 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

BUZ90

SIPMOS® Power Transistor

• N channel\n• Enhancement mode\n• Avalanche-rated

Infineon

英飞凌

BUZ900

BUZ900 - 晶体管, MOSFET, N沟道, 8 A, 160 V, 1.5 ohm, 1.5 V

The BUZ900 is a 160V N-channel Power MOSFET for audio applications. It features integral protection diode and enhancement mode. ·High speed switching\n·Semefab designed and diffused\n·High voltage\n·High energy rating\n·±14V Gate to source voltage\n·8A Body drain diode current\n·1°C/W Thermal resistance, junction to case;

TT Electronics

BUZ900

N-channel power MOSFET for audio applications, 160V

Magnatec

Magnatec

技术参数

  • Minimum Operating Temperature:

    -55°C

  • Maximum Power Dissipation:

    125000mW

  • Maximum Operating Temperature:

    150°C

  • Maximum Gate Source Voltage:

    ±14V

  • Maximum Drain Source Voltage:

    160V

  • Maximum Continuous Drain Current:

    8A

  • Configuration:

    Single

  • Channel Type:

    N

  • Channel Mode:

    Enhancement

  • Category:

    Power MOSFET

供应商型号品牌批号封装库存备注价格
西门子
05+
TO-220
2000
自己公司全新库存绝对有货
询价
INFINEON
24+
TO-220
60
询价
inf
24+
21322
公司原厂原装现货假一罚十!特价出售!强势库存!
询价
UNKNOWN
24+
原厂封装
4612
原装现货假一罚十
询价
XI.M.Z
16+
TO-220
10000
全新原装现货
询价
恩XP
23+
TO-220
11846
一级代理商现货批发,原装正品,假一罚十
询价
SIE
23+
TO-220
5000
专做原装正品,假一罚百!
询价
SIEMENS
25+
TO-220
90000
一级代理商进口原装现货、价格合理
询价
英飞凌
24+
TO-220
6430
原装现货/欢迎来电咨询
询价
INFIN
24+
65230
询价
更多BUZ90供应商 更新时间2026-1-17 10:32:00