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BUZ902

N CHANNEL POWER MOSFET

POWER MOSFETS FOR AUDIO APPLICATIONS FEATURES • HIGH SPEED SWITCHING • SEMEFAB DESIGNED AND DIFFUSED • HIGH VOLTAGE (220V & 250V) • HIGH ENERGY RATING • ENHANCEMENT MODE • INTEGRAL PROTECTION DIODES • COMPLIMENTARY P–CHANNEL BUZ907P & BUZ908P

文件:24.45 Kbytes 页数:2 Pages

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BUZ902P

N CHANNEL POWER MOSFET

POWER MOSFETS FOR AUDIO APPLICATIONS FEATURES • HIGH SPEED SWITCHING • SEMEFAB DESIGNED AND DIFFUSED • HIGH VOLTAGE (220V & 250V) • HIGH ENERGY RATING • ENHANCEMENT MODE • INTEGRAL PROTECTION DIODES • COMPLIMENTARY P–CHANNEL BUZ907P & BUZ908P

文件:24.45 Kbytes 页数:2 Pages

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BUZ903P

N CHANNEL POWER MOSFET

POWER MOSFETS FOR AUDIO APPLICATIONS FEATURES • HIGH SPEED SWITCHING • SEMEFAB DESIGNED AND DIFFUSED • HIGH VOLTAGE (220V & 250V) • HIGH ENERGY RATING • ENHANCEMENT MODE • INTEGRAL PROTECTION DIODES • COMPLIMENTARY P–CHANNEL BUZ907P & BUZ908P

文件:24.45 Kbytes 页数:2 Pages

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BUZ905

NEW PRODUCT UNDER DEVELOPMENT

POWER MOSFETS FOR AUDIO APPLICATIONS FEATURES • HIGH SPEED SWITCHING • P–CHANNEL POWER MOSFET • SEMEFAB DESIGNED AND DIFFUSED • HIGH VOLTAGE (160V & 200V) • HIGH ENERGY RATING • ENHANCEMENT MODE • INTEGRAL PROTECTION DIODE • N–CHANNEL ALSO AVAILABLE AS BUZ900 &

文件:33.79 Kbytes 页数:2 Pages

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BUZ905DP

P-CHANNEL POWER MOSFET FOR AUDIO APPLICATIONS

[MAGNATEC] POWER MOSFETS FOR AUDIO APPLICATIONS FEATURES • HIGH SPEED SWITCHING • P–CHANNEL POWER MOSFET • SEMEFAB DESIGNED AND DIFFUSED • HIGH VOLTAGE (160V & 200V) • HIGH ENERGY RATING • ENHANCEMENT MODE • INTEGRAL PROTECTION DIODE • N–CHANNEL ALSO AVAILABLE AS BUZ900DP & B

文件:40 Kbytes 页数:4 Pages

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BUZ905DP

isc P-Channel MOSFET Transistor

FEATURES · Drain Current -ID= -16A@ TC=25℃ · Drain Source Voltage -VDSS= -160V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.75Ω(Max)@VGS= -10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

文件:303.33 Kbytes 页数:2 Pages

ISC

无锡固电

BUZ905P

P-CHANNEL POWER MOSFET

POWER MOSFETS FOR AUDIO APPLICATIONS FEATURES • HIGH SPEED SWITCHING • P–CHANNEL POWER MOSFET • SEMEFAB DESIGNED AND DIFFUSED • HIGH VOLTAGE (160V & 200V) • HIGH ENERGY RATING • ENHANCEMENT MODE • INTEGRAL PROTECTION DIODE • N–CHANNEL ALSO AVAILABLE AS BUZ900P &

文件:43.57 Kbytes 页数:3 Pages

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BUZ905X4S

NEW PRODUCT UNDER DEVELOPMENT

POWER MOSFETS FOR AUDIO APPLICATIONS FEATURES • HIGH SPEED SWITCHING • P–CHANNEL POWER MOSFET • SEMEFAB DESIGNED AND DIFFUSED • HIGH VOLTAGE (160V & 200V) • HIGH ENERGY RATING • ENHANCEMENT MODE • INTEGRAL PROTECTION DIODE • N–CHANNEL ALSO AVAILABLE AS BUZ900 &

文件:33.79 Kbytes 页数:2 Pages

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BUZ906DP

P-CHANNEL POWER MOSFET FOR AUDIO APPLICATIONS

[MAGNATEC] POWER MOSFETS FOR AUDIO APPLICATIONS FEATURES • HIGH SPEED SWITCHING • P–CHANNEL POWER MOSFET • SEMEFAB DESIGNED AND DIFFUSED • HIGH VOLTAGE (160V & 200V) • HIGH ENERGY RATING • ENHANCEMENT MODE • INTEGRAL PROTECTION DIODE • N–CHANNEL ALSO AVAILABLE AS BUZ900DP & B

文件:40 Kbytes 页数:4 Pages

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BUZ906P

P-CHANNEL POWER MOSFET

POWER MOSFETS FOR AUDIO APPLICATIONS FEATURES • HIGH SPEED SWITCHING • P–CHANNEL POWER MOSFET • SEMEFAB DESIGNED AND DIFFUSED • HIGH VOLTAGE (160V & 200V) • HIGH ENERGY RATING • ENHANCEMENT MODE • INTEGRAL PROTECTION DIODE • N–CHANNEL ALSO AVAILABLE AS BUZ900P &

文件:43.57 Kbytes 页数:3 Pages

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技术参数

  • Minimum Operating Temperature:

    -55°C

  • Maximum Power Dissipation:

    125000mW

  • Maximum Operating Temperature:

    150°C

  • Maximum Gate Source Voltage:

    ±14V

  • Maximum Drain Source Voltage:

    160V

  • Maximum Continuous Drain Current:

    8A

  • Configuration:

    Single

  • Channel Type:

    N

  • Channel Mode:

    Enhancement

  • Category:

    Power MOSFET

供应商型号品牌批号封装库存备注价格
西门子
05+
TO-220
2000
自己公司全新库存绝对有货
询价
INFINEON
24+
TO-220
60
询价
inf
24+
21322
公司原厂原装现货假一罚十!特价出售!强势库存!
询价
UNKNOWN
24+
原厂封装
4612
原装现货假一罚十
询价
XI.M.Z
16+
TO-220
10000
全新原装现货
询价
恩XP
23+
TO-220
11846
一级代理商现货批发,原装正品,假一罚十
询价
SIE
23+
TO-220
5000
专做原装正品,假一罚百!
询价
SIEMENS
25+
TO-220
90000
一级代理商进口原装现货、价格合理
询价
英飞凌
24+
TO-220
6430
原装现货/欢迎来电咨询
询价
INFIN
24+
65230
询价
更多BUZ90供应商 更新时间2026-1-17 10:32:00