isc P-Channel MOSFET Transistor

FEATURES · Drain Current -ID= -8A@ TC=25℃ · Drain Source Voltage -VDSS= -200V(Min) · Static Drain-Source On-Resistance -RDS(on) = 1.5Ω(Max)@VGS= -10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

文件：322.38 Kbytes 页数：2 Pages

ISC

无锡固电

NEW PRODUCT UNDER DEVELOPMENT

POWER MOSFETS FOR AUDIO APPLICATIONS FEATURES • HIGH SPEED SWITCHING • P–CHANNEL POWER MOSFET • SEMEFAB DESIGNED AND DIFFUSED • HIGH VOLTAGE (160V & 200V) • HIGH ENERGY RATING • ENHANCEMENT MODE • INTEGRAL PROTECTION DIODE • N–CHANNEL ALSO AVAILABLE AS BUZ900 &

文件：33.79 Kbytes 页数：2 Pages

ETCList of Unclassifed Manufacturers

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POWER MOSFETS FOR AUDIO APPLICATIONS

POWER MOSFETS FOR AUDIO APPLICATIONS FEATURES • HIGH SPEED SWITCHING • SEMEFAB DESIGNED AND DIFFUSED • HIGH VOLTAGE (220V & 250V) • HIGH ENERGY RATING • ENHANCEMENT MODE • INTEGRAL PROTECTION DIODES • COMPLIMENTARY N–CHANNEL BUZ902 & BUZ903

文件：25.89 Kbytes 页数：2 Pages

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P-CHANNEL POWER MOSFET

POWER MOSFETS FOR AUDIO APPLICATIONS FEATURES • HIGH SPEED SWITCHING • SEMEFAB DESIGNED AND DIFFUSED • HIGH VOLTAGE (220V & 250V) • HIGH ENERGY RATING • ENHANCEMENT MODE • INTEGRAL PROTECTION DIODES • COMPLIMENTARY N–CHANNEL BUZ902D & BUZ903D

文件：29.29 Kbytes 页数：2 Pages

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POWER MOSFETS FOR AUDIO APPLICATIONS

POWER MOSFETS FOR AUDIO APPLICATIONS FEATURES • HIGH SPEED SWITCHING • SEMEFAB DESIGNED AND DIFFUSED • HIGH VOLTAGE (220V & 250V) • HIGH ENERGY RATING • ENHANCEMENT MODE • INTEGRAL PROTECTION DIODES • COMPLIMENTARY N–CHANNEL BUZ902P & BUZ903P

文件：24.52 Kbytes 页数：2 Pages

ETCList of Unclassifed Manufacturers

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POWER MOSFETS FOR AUDIO APPLICATIONS

POWER MOSFETS FOR AUDIO APPLICATIONS FEATURES • HIGH SPEED SWITCHING • SEMEFAB DESIGNED AND DIFFUSED • HIGH VOLTAGE (220V & 250V) • HIGH ENERGY RATING • ENHANCEMENT MODE • INTEGRAL PROTECTION DIODES • COMPLIMENTARY N–CHANNEL BUZ902 & BUZ903

文件：25.89 Kbytes 页数：2 Pages

ETCList of Unclassifed Manufacturers

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P-CHANNEL POWER MOSFET

POWER MOSFETS FOR AUDIO APPLICATIONS FEATURES • HIGH SPEED SWITCHING • SEMEFAB DESIGNED AND DIFFUSED • HIGH VOLTAGE (220V & 250V) • HIGH ENERGY RATING • ENHANCEMENT MODE • INTEGRAL PROTECTION DIODES • COMPLIMENTARY N–CHANNEL BUZ902D & BUZ903D

文件：29.29 Kbytes 页数：2 Pages

ETCList of Unclassifed Manufacturers

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POWER MOSFETS FOR AUDIO APPLICATIONS

POWER MOSFETS FOR AUDIO APPLICATIONS FEATURES • HIGH SPEED SWITCHING • SEMEFAB DESIGNED AND DIFFUSED • HIGH VOLTAGE (220V & 250V) • HIGH ENERGY RATING • ENHANCEMENT MODE • INTEGRAL PROTECTION DIODES • COMPLIMENTARY N–CHANNEL BUZ902P & BUZ903P

文件：24.52 Kbytes 页数：2 Pages

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isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 4.0A@ TC=25℃ ·Drain Source Voltage : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 2.0Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive,

文件：333.12 Kbytes 页数：2 Pages

ISC

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SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated)

• N channel • Enhancement mode • Avalanche-rated

文件：175.75 Kbytes 页数：9 Pages

SIEMENS

西门子