isc P-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= -3.6A@ TC=25℃ ·Drain Source Voltage : VDSS= -200V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.5Ω(Max) @ VGS= -10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor dri

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ISC

无锡固电

SIPMOS Power Transistor (P channel Enhancement mode Avalanche rated)

SIPMOS® Power Transistor • P channel • Enhancement mode • Avalanche rated

文件：180.43 Kbytes 页数：9 Pages

SIEMENS

西门子

SIPMOS® Power Transistor

SIPMOS® Power Transistor• P channel\n• Enhancement mode\n• Avalanche rated

Infineon

英飞凌

N-CHANNEL BROADBAND RF POWER MOSFETs

Designed for broadband commercial and military applications up to 200 MHz frequency range. The high–power, high–gain and broadband performance of these devices make possible solid state transmitters for FM broadcast or TV channel frequency bands. • Guaranteed Performance at 150 MHz, 28 V:

文件：107.38 Kbytes 页数：8 Pages

MOTOROLA

摩托罗拉

N-CHANNEL BROADBAND RF POWER MOSFETs

Designed for broadband commercial and military applications up to 200 MHz frequency range. The high–power, high–gain and broadband performance of these devices make possible solid state transmitters for FM broadcast or TV channel frequency bands. • Guaranteed Performance at 150 MHz, 28 V:

文件：107.38 Kbytes 页数：8 Pages

MOTOROLA

摩托罗拉

L-BAND PA DRIVER AMPLIFIER

DESCRIPTION The PPG173TA is L-Band PA driver amplifier developed for digital cellular telephone and PCS applications. This device feature high output power and low distortion with 2.8 V low voltage and 25 mA low current operation. It is housed in a very small 6 pin mini-mold package available on

文件：86.23 Kbytes 页数：8 Pages

NEC

瑞萨