首页 >BUP31>规格书列表

型号下载 订购功能描述制造商 上传企业LOGO

BUP311D

HighSpeed 2-Technology

• Designed for: - TV – Horizontal Line Deflection • 2nd generation HighSpeed-Technology for 1200V applications offers: - loss reduction in resonant circuits - temperature stable behavior - parallel switching capability - tight parameter distribution - Eoff optimized for IC =3A - simple Ga

文件:201.5 Kbytes 页数:10 Pages

Infineon

英飞凌

BUP312

IGBT

• Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Avalanche rated

文件:169.39 Kbytes 页数:6 Pages

SIEMENS

西门子

BUP313

IGBT (Low forward voltage drop High switching speed Low tail current Latch-up free Avalanche rated)

• Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Avalanche rated

文件:99.4 Kbytes 页数:8 Pages

SIEMENS

西门子

BUP313D

IGBT With Antiparallel Diode (Low forward voltage drop High switching speed Low tail current Latch-up free)

IGBT With Antiparallel Diode • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Including fast free-wheel diode

文件:110.27 Kbytes 页数:8 Pages

SIEMENS

西门子

BUP314

IGBT (Low forward voltage drop High switching speed Low tail current Latch-up free Avalanche rated)

• Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Avalanche rated

文件:89.91 Kbytes 页数:8 Pages

SIEMENS

西门子

BUP314D

IGBT With Antiparallel Diode (Low forward voltage drop High switching speed Low tail current Latch-up free Including fast free-wheel diode)

• Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Including fast free-wheel diode

文件:105.28 Kbytes 页数:9 Pages

SIEMENS

西门子

BUP311D

IGBT With Antiparallel Diode Preliminary data sheet

文件:71 Kbytes 页数:9 Pages

Infineon

英飞凌

BUP314S

IGBT (High switching speed Very low switching losses Low tail current Latch-up free Avalanche rated)

文件:59.77 Kbytes 页数:7 Pages

SIEMENS

西门子

BUP313

IGBT (Low forward voltage drop High switching speed Low tail current Latch-up free Avalanche rated)

Infineon

英飞凌

BUP313D

IGBT With Antiparallel Diode (Low forward voltage drop High switching speed Low tail current Latch-up free)

Infineon

英飞凌

详细参数

  • 型号:

    BUP31

  • 功能描述:

    IGBT 晶体管 1200V, 20A

  • RoHS:

  • 制造商:

    Fairchild Semiconductor

  • 配置:

    集电极—发射极最大电压

  • VCEO:

    650 V

  • 集电极—射极饱和电压:

    2.3 V

  • 栅极/发射极最大电压:

    20 V 在25

  • C的连续集电极电流:

    150 A

  • 栅极—射极漏泄电流:

    400 nA

  • 功率耗散:

    187 W

  • 封装/箱体:

    TO-247

  • 封装:

    Tube

供应商型号品牌批号封装库存备注价格
INFINEON
2024+
N/A
70000
柒号只做原装 现货价秒杀全网
询价
infineon
24+
TO-220(218)
13750
询价
INFIEON
25+
TO-3P
5000
百分百原装正品 真实公司现货库存 本公司只做原装 可
询价
INFINEON/英飞凌
23+
TO-218
50000
全新原装正品现货,支持订货
询价
INFINEON/英飞凌
23+
TO-218
288939
原厂授权一级代理,专业海外优势订货,价格优势、品种
询价
Infineon/英飞凌
07+
TO-218
5000
一级代理,专注军工、汽车、医疗、工业、新能源、电力
询价
INFINEON/英飞凌
22+
TO-218
20000
原装现货,实单支持
询价
INFINEON
22+
TO-218
8000
终端可免费供样,支持BOM配单
询价
INFINEON
23+
2800
正品原装货价格低
询价
???
2023+
6172
进口原装现货
询价
更多BUP31供应商 更新时间2025-10-6 13:00:00