IGBT (High switching speed Very low switching losses Low tail current Latch-up free Avalanche rated)

文件：59.77 Kbytes 页数：7 Pages

SIEMENS

西门子

IGBT (High switching speed Very low switching losses Low tail current Latch-up free Avalanche rated)

Infineon

英飞凌

Digital transistors (built-in resistor)

600mA/ 15V Digital transistors(with built-in resistors) Features In addition to the features ofregular digital transistors, 1) Low saturation voltage, typically VCE(sat)=40mVat IC/IB=50mA/2.5mA, makes these transistors ideal for muting circuits. 2) Thesetransistors can be usedat hig

文件：74.4 Kbytes 页数：4 Pages

ROHM

罗姆

Digital transistors (built-in resistor)

600mA/ 15V Digital transistors(with built-in resistors) Features In addition to the features ofregular digital transistors, 1) Low saturation voltage, typically VCE(sat)=40mVat IC/IB=50mA/2.5mA, makes these transistors ideal for muting circuits. 2) Thesetransistors can be usedat hig

文件：74.4 Kbytes 页数：4 Pages

ROHM

罗姆

RF POWER TRANSISTORS NPN SILICON

The RF Line NPN Silicon RF Power Transistors . . . designed primarily for wideband large–signal driver and output amplifier stages in the 30–200 MHz frequency range. • Guaranteed Performance at 150 MHz, 28 Vdc Output Power = 30 Watts Minimum Gain = 10 dB • 100 Tested for Load Mismatch

文件：113.55 Kbytes 页数：6 Pages

MOTOROLA

摩托罗拉