丝印：H04；Package：UMT3；Digital transistors (built-in resistor)

600mA/ 15V Digital transistors(with built-in resistors) Features In addition to the features ofregular digital transistors, 1) Low saturation voltage, typically VCE(sat)=40mVat IC/IB=50mA/2.5mA, makes these transistors ideal for muting circuits. 2) Thesetransistors can be usedat hig

文件：74.4 Kbytes 页数：4 Pages

ROHM

罗姆

Digital transistors (built-in resistor)

600mA/ 15V Digital transistors(with built-in resistors) Features In addition to the features ofregular digital transistors, 1) Low saturation voltage, typically VCE(sat)=40mVat IC/IB=50mA/2.5mA, makes these transistors ideal for muting circuits. 2) Thesetransistors can be usedat hig

文件：75.93 Kbytes 页数：3 Pages

ROHM

罗姆

Package：SC-70，SOT-323；包装：卷带（TR） 类别：分立半导体产品 晶体管 - 双极（BJT）- 单，预偏置 描述：TRANS PREBIAS NPN 200MW UMT3

ROHM

罗姆

Digital FET, P-Channel

General Description This P-Channel enhancement mode field effect transistor is produced using Fairchild Semiconductor’s proprietary, high cell density, DMOS technology. This very high density process is tailored to minimize onstate resistance at low gate drive conditions. This device is designed

文件：84.38 Kbytes 页数：5 Pages

FAIRCHILD

仙童半导体

RF POWER TRANSISTORS NPN SILICON

The RF Line NPN Silicon RF Power Transistors . . . designed primarily for wideband large–signal driver and output amplifier stages in the 30–200 MHz frequency range. • Guaranteed Performance at 150 MHz, 28 Vdc Output Power = 30 Watts Minimum Gain = 10 dB • 100 Tested for Load Mismatch

文件：113.55 Kbytes 页数：6 Pages

MOTOROLA

摩托罗拉

.Neu: NPN-Silizium-Fototransistor New: Silicon NPN Phototransistor

Features ●Especially suitable for applications from 460 nm to 1080 nm (SFH 314) and of 880 nm (SFH 314 FA) ●High linearity ●5 mm plastic package Applications ●Computer-controlled flashes ●Photointerrupters ●Industrial electronics ●For control and drive circuits

文件：45.49 Kbytes 页数：5 Pages

SIEMENS

西门子