NPN SILICON TRANSISTOR WITH INTEGRATED DIODE

description The new BULDxx range of transistors have been designed specifically for use in High Frequency Electronic Ballasts (HFEB’s). This range of switching transistors has tightly controlled storage times and an integrated fast trr antiparallel diode. The revolutionary design ensures that the

文件：231.07 Kbytes 页数：10 Pages

POINN

NPN SILICON TRANSISTOR WITH INTEGRATED DIODE

description The new BULDxx range of transistors have been designed specifically for use in High Frequency Electronic Ballasts (HFEB’s). This range of switching transistors has tightly controlled storage times and an integrated fast trr antiparallel diode. The revolutionary design ensures that the

文件：231.07 Kbytes 页数：10 Pages

POINN

NPN SILICON TRANSISTOR WITH INTEGRATED DIODE

description The new BULDxx range of transistors have been designed specifically for use in High Frequency Electronic Ballasts (HFEB’s). This range of switching transistors has tightly controlled storage times and an integrated fast trr antiparallel diode. The revolutionary design ensures that the

文件：231.07 Kbytes 页数：10 Pages

POINN

NPN SILICON TRANSISTOR WITH INTEGRATED DIODE

Power Innovations

NPN SILICON TRANSISTOR WITH INTEGRATED DIODE

Power Innovations