NPN SILICON TRANSISTOR WITH INTEGRATED DIODE

description The new BULDxx range of transistors have been designed specifically for use in High Frequency Electronic Ballasts (HFEB’s). This range of switching transistors has tightly controlled storage times and an integrated fast trr antiparallel diode. The revolutionary design ensures that the

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POINN

CDIP

DDC

上传：深圳市宏捷佳电子科技有限公司

TO-3

MOT

上传：深圳市昌和盛利电子有限公司

TO-220

ST

上传：深圳市华康联电子科技有限公司（销售一部）

TP3P

ST

上传：深圳市正纳电子有限公司