NPN SILICON POWER TRANSISTOR

● Designed Specifically for High Frequency Electronic Ballasts up to 50 W ● hFE 7 to 21 at VCE = 1 V, IC = 800 mA ● Low Power Losses (On-state and Switching) ● Key Parameters Characterised at High Temperature ● Tight and Reproducible Parametric Distributions

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POINN

NPN SILICON POWER TRANSISTOR

文件：124 Kbytes 页数：6 Pages

BOURNS

伯恩斯

NPN SILICON POWER TRANSISTOR

● Designed Specifically for High Frequency Electronic Ballasts up to 50 W\n● hFE 7 to 21 at VCE = 1 V, IC = 800 mA\n● Low Power Losses (On-state and Switching)\n● Key Parameters Characterised at High Temperature\n● Tight and Reproducible Parametric Distributions

Power Innovations

Package：TO-220-3；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS NPN 400V 2.5A TO220

Bourns Inc.