N-channel TrenchPLUS logic level FET

1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. The devices include TrenchPLUS diodes for clamping, ElectroStatic Discharge (ESD) protection and temperature sensing. This product has been designed and

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N-channel TrenchPLUS logic level FET

1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. The devices include TrenchPLUS diodes for ElectroStatic Discharge (ESD) protection and temperature sensing. This product has been designed and qualified

文件：372.7 Kbytes 页数：16 Pages

NEXPERIA

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N-channel TrenchPLUS logic level FET

文件：268.2 Kbytes 页数：15 Pages

恩XP

N-channel TrenchPLUS logic level FET

文件：268.2 Kbytes 页数：15 Pages

PHI

PHI

N-channel TrenchPLUS logic level FET

文件：258.41 Kbytes 页数：15 Pages

恩XP

N-channel TrenchPLUS logic level FET

Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. The devices include TrenchPLUS diodes for clamping, ElectroStatic Discharge (ESD) protection and temperature sensing. This product has been designed and qualified to the appropriate

Nexperia

安世

N-channel TrenchPLUS logic level FET

Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. The devices include TrenchPLUS diodes for ElectroStatic Discharge (ESD) protection and temperature sensing. This product has been designed and qualified to the appropriate AEC standa

Nexperia

安世