isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 23A@ TC=25℃ ·Drain Source Voltage : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 75mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D

文件：333.25 Kbytes 页数：2 Pages

ISC

无锡固电

N-channel TrenchMOS standard level FET

1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits

文件：695.1 Kbytes 页数：13 Pages

NEXPERIA

安世

TrenchMOS transistor Standard level FET

GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope suitable for surface mounting. Using ’trench’ technology the device features very low on-state resistance and has integral zener diodes giving ESD protection up to 2kV. It is intended

文件：56.18 Kbytes 页数：8 Pages

PHI

PHI

TrenchMOS standard level FET

Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology, featuring very low on-state resistance. Features ■ TrenchMOS™ technology ■ Q101 compliant ■ 175 °C rated ■ Standard level compatible. Applications ■ Automotive and general

文件：334.52 Kbytes 页数：15 Pages

PHI

PHI

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 20.3A@ TC=25℃ ·Drain Source Voltage : VDSS= 55V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 75mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

文件：333.41 Kbytes 页数：2 Pages

ISC

无锡固电

丝印：D2PAK；Package：TO-263；N-Channel 60 V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount • Available in Tape and Reel • Dynamic dV/dt Rating • Logic-Level Gate Drive • Fast Switching • Compliant to RoHS Directive 2002/95/EC

文件：1.32322 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

丝印：BUK7675-55A；Package：SOT404；N-channel TrenchMOS standard level FET

1. General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 2. Features and benefits •

文件：727.18 Kbytes 页数：12 Pages

NEXPERIA

安世

TrenchMOS standard level FET

文件：139.14 Kbytes 页数：15 Pages

PHI

PHI

N-channel TrenchMOS standard level FET

文件：194.13 Kbytes 页数：13 Pages

恩XP

N-channel TrenchMOS standard level FET

文件：194.13 Kbytes 页数：13 Pages

PHI

PHI