BUK7675-55

TrenchMOS transistor Standard level FET

GENERALDESCRIPTION N-channelenhancementmodestandardlevelfield-effectpowertransistorinaplasticenvelopesuitableforsurfacemounting.Using’trench’technologythedevicefeaturesverylowon-stateresistanceandhasintegralzenerdiodesgivingESDprotectionupto2kV.Itisintended

BUK7675-55

TrenchMOS transistor Standard level FET

BUK7675-55A

TrenchMOS standard level FET

Description N-channelenhancementmodefield-effectpowertransistorinaplasticpackageusingTrenchMOS™technology,featuringverylowon-stateresistance. Features ■TrenchMOS™technology ■Q101compliant ■175°Crated ■Standardlevelcompatible. Applications ■Automotiveandgeneral

BUK7675-55A

N-Channel 60 V (D-S) MOSFET

FEATURES •Halogen-freeAccordingtoIEC61249-2-21Definition •SurfaceMount •AvailableinTapeandReel •DynamicdV/dtRating •Logic-LevelGateDrive •FastSwitching •ComplianttoRoHSDirective2002/95/EC

BUK7675-55A

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent:ID=20.3A@TC=25℃ ·DrainSourceVoltage :VDSS=55V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=75mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-

BUK7675-55A

N-channel TrenchMOS standard level FET

1.Generaldescription StandardlevelN-channelenhancementmodeField-EffectTransistor(FET)inaplastic packageusingTrenchMOStechnology.Thisproducthasbeendesignedandqualifiedto theappropriateAECstandardforuseinautomotivecriticalapplications. 2.Featuresandbenefits •

BUK7675-55A_15

N-channel TrenchMOS standard level FETN-channel TrenchMOS standard level FET