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BUK7675-55A

丝印:BUK7675-55A;Package:SOT404;N-channel TrenchMOS standard level FET

1. General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 2. Features and benefits •

文件:727.18 Kbytes 页数:12 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

BUK7675-55A

丝印:BUK7675-55A;Package:SOT404;N-channel TrenchMOS standard level FET

1. General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 2. Features and benefits •

文件:727.18 Kbytes 页数:12 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

BUK7675-55A

丝印:D2PAK;Package:TO-263;N-Channel 60 V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount • Available in Tape and Reel • Dynamic dV/dt Rating • Logic-Level Gate Drive • Fast Switching • Compliant to RoHS Directive 2002/95/EC

文件:1.32322 Mbytes 页数:9 Pages

VBSEMI

微碧半导体

BUK7675-55A

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 20.3A@ TC=25℃ ·Drain Source Voltage : VDSS= 55V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 75mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

文件:333.41 Kbytes 页数:2 Pages

ISC

无锡固电

BUK7675-55A

TrenchMOS standard level FET

Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology, featuring very low on-state resistance. Features ■ TrenchMOS™ technology ■ Q101 compliant ■ 175 °C rated ■ Standard level compatible. Applications ■ Automotive and general

文件:334.52 Kbytes 页数:15 Pages

PHI

飞利浦

PHI

BUK7675-55A_15

N-channel TrenchMOS standard level FETN-channel TrenchMOS standard level FET

文件:272.37 Kbytes 页数:12 Pages

PHI

飞利浦

PHI

详细参数

  • 型号:

    BUK7675-55A

  • 功能描述:

    MOSFET TAPE13 PWR-MOS

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶体管极性:

    N-Channel

  • 汲极/源极击穿电压:

    650 V

  • 闸/源击穿电压:

    25 V

  • 漏极连续电流:

    130 A 电阻汲极/源极

  • RDS(导通):

    0.014 Ohms

  • 配置:

    Single

  • 安装风格:

    Through Hole

  • 封装/箱体:

    Max247

  • 封装:

    Tube

供应商型号品牌批号封装库存备注价格
恩XP
SOT-263
30216
提供BOM表配单TEL:0755-83759919QQ:2355705587杜S
询价
恩XP
2021+
NA
9000
原装现货,随时欢迎询价
询价
恩XP
18+
NA
4800
询价
恩XP
24+
TO-263
504442
免费送样原盒原包现货一手渠道联系
询价
恩XP
18+
NA
4800
询价
恩XP
23+
N/A
12000
一级代理,专注军工、汽车、医疗、工业、新能源、电力
询价
PH
24+
SOT404TO-263D2PAK
8866
询价
恩XP
23+
TO-263
11846
一级代理商现货批发,原装正品,假一罚十
询价
VBsemi(台湾微碧)
2447
TO-263
105000
50个/管一级代理专营品牌!原装正品,优势现货,长期
询价
恩XP
23+
NA
20094
正纳10年以上分销经验原装进口正品做服务做口碑有支持
询价
更多BUK7675-55A供应商 更新时间2025-9-21 14:01:00