丝印：BUK9214-30A；Package：SOT428；N-channel TrenchMOS logic level FET

1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits  L

文件：761.21 Kbytes 页数：14 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：BUK9214-30A；Package：SOT428；N-channel TrenchMOS logic level FET

1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits  L

文件：761.21 Kbytes 页数：14 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

TrenchMOS logic level FET

Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™1 technology, featuring very low on-state resistance. Product availability: BUK9214-30A in SOT428 (D-PAK). Features ■ TrenchMOS™ technology ■ Q101 compliant ■ 175 °C rat

文件：292.17 Kbytes 页数：12 Pages

PHI

飞利浦

N-channel TrenchMOS logic level FET

文件：197.95 Kbytes 页数：14 Pages

PHI

飞利浦