型号：BUK9E3R2-40B；Package：I2PAK；N-channel TrenchMOS logic level FET

1. General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 2. Features and benefits • AEC

文件：364.78 Kbytes 页数：14 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

型号：BUK9E3R2-40B；Package：I2PAK；N-channel TrenchMOS logic level FET

1. General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 2. Features and benefits • AEC

文件：364.78 Kbytes 页数：14 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

型号：BUK9E3R2-40B；isc N-Channel MOSFET Transistor

DESCRIPTION ·Drain Source Voltage : VDSS= 40V(Min) ·Low RDS(ON) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for Switched Mode Power Supplies (SMPS), motor control,welding, and in general purpose switchi

文件：326.96 Kbytes 页数：2 Pages

无锡固电

型号：BUK9E3R2-40B；TrenchMOS logic level FET

文件：331.43 Kbytes 页数：16 Pages

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