丝印：BUL741；Package：TO-220；High voltage fast-switching NPN power transistors

Features ■ High voltage capability ■ Low spread of dynamic parameters ■ Minimum lot-to-lot spread for reliable operation ■ Very high switching speed Applications ■ Electronic ballast for fluorescent lighting ■ Switch mode power supplies. Description The devices are manufactured using

文件：334.78 Kbytes 页数：12 Pages

STMICROELECTRONICS

意法半导体

丝印：BUL741FP；Package：TO-220FP；High voltage fast-switching NPN power transistors

Features ■ High voltage capability ■ Low spread of dynamic parameters ■ Minimum lot-to-lot spread for reliable operation ■ Very high switching speed Applications ■ Electronic ballast for fluorescent lighting ■ Switch mode power supplies. Description The devices are manufactured using

文件：334.78 Kbytes 页数：12 Pages

STMICROELECTRONICS

意法半导体

丝印：BUL741；Package：TO-220；High voltage fast-switching NPN power transistors

Features ■ High voltage capability ■ Low spread of dynamic parameters ■ Minimum lot-to-lot spread for reliable operation ■ Very high switching speed Applications ■ Electronic ballast for fluorescent lighting ■ Switch mode power supplies. Description The devices are manufactured using

文件：334.78 Kbytes 页数：12 Pages

STMICROELECTRONICS

意法半导体

丝印：BUL741FP；Package：TO-220FP；High voltage fast-switching NPN power transistors

Features ■ High voltage capability ■ Low spread of dynamic parameters ■ Minimum lot-to-lot spread for reliable operation ■ Very high switching speed Applications ■ Electronic ballast for fluorescent lighting ■ Switch mode power supplies. Description The devices are manufactured using

文件：334.78 Kbytes 页数：12 Pages

STMICROELECTRONICS

意法半导体

High voltage fast-switching NPN Power Transistor

Description The devices are manufactured using high voltage multi-epitaxial planar technology for high switching speeds and high voltage capability. Thanks to an increased intermediate layer, it has an intrinsic ruggedness which enables the transistor to withstand an high collector current level

文件：320.14 Kbytes 页数：10 Pages

STMICROELECTRONICS

意法半导体

isc Silicon NPN Power Transistor

DESCRIPTION ·Collector–Emitter Breakdown Voltage : V(BR)CEO = 400V(Min.) ·Collector Saturation Voltage : VCE(sat) = 0.5V(Max) @ IC= 0.7A APPLICATIONS ·Designed for electronic lamp ballast circuits switch-mode power supplies applications.

文件：191.85 Kbytes 页数：2 Pages

ISC

无锡固电

High voltage fast-switching NPN power transistors

Features ■ High voltage capability ■ Low spread of dynamic parameters ■ Minimum lot-to-lot spread for reliable operation ■ Very high switching speed Applications ■ Electronic ballast for fluorescent lighting ■ Switch mode power supplies. Description The devices are manufactured using

文件：334.78 Kbytes 页数：12 Pages

STMICROELECTRONICS

意法半导体

High voltage fast-switching NPN power transistor

文件：322.59 Kbytes 页数：10 Pages

STMICROELECTRONICS

意法半导体

High voltage fast-switching NPN power transistor

文件：322.59 Kbytes 页数：10 Pages

STMICROELECTRONICS

意法半导体