isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 23A@ TC=25℃ ·Drain Source Voltage : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 75mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D

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ISC

无锡固电

N-channel TrenchMOS standard level FET

1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits

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NEXPERIA

安世

TrenchMOS standard level FET

文件：139.14 Kbytes 页数：15 Pages

PHI

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N-channel TrenchMOS standard level FET

文件：194.13 Kbytes 页数：13 Pages

恩XP

N-channel TrenchMOS standard level FET

文件：194.13 Kbytes 页数：13 Pages

PHI

飞利浦

BUK7675-100A - N-channel TrenchMOS standard level FET

N-channel TrenchMOS standard level FET - Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. ·Low conduction losses due to low on-state resistance\n·Q101 compliant\n·Suitable for standard level gate drive sources\n·Suitable for thermally demanding environments due to 175 °C rating;

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