丝印：BUK764R4-60E；Package：D2PAK；N-channel TrenchMOS standard level FET

文件：721.76 Kbytes 页数：13 Pages

NEXPERIA

安世

丝印：BUK764R4-60E；Package：D2PAK；N-channel TrenchMOS standard level FET

文件：721.76 Kbytes 页数：13 Pages

NEXPERIA

安世

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 100A@ TC=25℃ ·Drain Source Voltage : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 4.5mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

文件：321.5 Kbytes 页数：2 Pages

ISC

无锡固电

N-channel TrenchMOS standard level FET

文件：215.68 Kbytes 页数：12 Pages

PHI

飞利浦