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SMBJ26A-TR

丝印:BUK;Transil?

Description The SMBJ Transil series has been designed to protect sensitive equipment against electrostatic discharges according to IEC 61000-4-2, and MIL STD 883, method 3015, and electrical over stress according to IEC 61000-4-4 and 5. These devices are more generally used against surges below 6

文件:131.67 Kbytes 页数:10 Pages

STMICROELECTRONICS

意法半导体

BUK7214-75B

丝印:BUK7214-75B;Package:DPAK;N-channel TrenchMOS standard level FET

1. General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 2. Features and benefits

文件:736.76 Kbytes 页数:12 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

BUK7277-55A

丝印:BUK7277-55A;Package:SOT428;N-channel TrenchMOS standard level FET

1. General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 2. Features and benefits •

文件:731.27 Kbytes 页数:12 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

BUK7610-100B

丝印:BUK7610-100B;Package:SOT404;N-channel TrenchMOS standard level FET

1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits

文件:742.39 Kbytes 页数:12 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

BUK761R4-30E

丝印:BUK761R4-30E;Package:D2PAK;N-channel TrenchMOS standard level FET

1.1 General description Standard level N-channel MOSFET in a SOT404 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits • AEC Q101 compliant • Repetitive avalanche

文件:332.08 Kbytes 页数:14 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

BUK761R7-40E

丝印:BUK761R7-40E;Package:D2PAK;N-channel TrenchMOS standard level FET

1. General description Standard level N-channel MOSFET in a SOT404A package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits • AEC Q101 compliant • Repetitive avalanch

文件:719.85 Kbytes 页数:13 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

BUK762R6-40E

丝印:BUK762R6-40E;Package:D2PAK;N-channel TrenchMOS standard level FET

1. General description Standard level N-channel MOSFET in a SOT404 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits • AEC Q101 compliant • Repetitive avalanche r

文件:720.18 Kbytes 页数:13 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

BUK7631-100E

丝印:BUK7631-100E;Package:SOT404;N-channel TrenchMOS standard level FET

1.1 General description Standard level N-channel MOSFET in a SOT404 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits • AEC Q101 compliant • Repetitive avalanche

文件:723.29 Kbytes 页数:13 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

BUK763R9-60E

丝印:BUK763R9-60E;Package:D2PAK;N-channel TrenchMOS standard level FET

1. General description Standard level N-channel MOSFET in a SOT404 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits • AEC Q101 compliant • Repetitive avalanche r

文件:720.4 Kbytes 页数:13 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

BUK765R0-100E

丝印:BUK765R0-100E;Package:D2PAK;N-channel TrenchMOS standard level FET

1. General description Standard level N-channel MOSFET in a SOT404 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits • AEC Q101 compliant • Repetitive avalanche r

文件:725.51 Kbytes 页数:13 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

详细参数

  • 型号:

    BUK

  • 功能描述:

    TVS 二极管 - 瞬态电压抑制器 600W 26V Unidirect

  • RoHS:

  • 制造商:

    Vishay Semiconductors

  • 极性:

    Bidirectional

  • 击穿电压:

    58.9 V

  • 钳位电压:

    77.4 V

  • 峰值浪涌电流:

    38.8 A

  • 封装/箱体:

    DO-214AB

  • 最小工作温度:

    - 55 C

  • 最大工作温度:

    + 150 C

供应商型号品牌批号封装库存备注价格
ST/意法
25+
SMB
46048
ST/意法全新特价SMBJ26A-TR即刻询购立享优惠#长期有货
询价
ST/意法
24+
SMB
589
只做原厂渠道 可追溯货源
询价
ST/意法
18+
SMB
589
深圳原装进口无铅现货正规报关
询价
ST/意法
2450+
SMB
9850
只做原装正品现货或订货假一赔十!
询价
ST
24+
SMB
2280
询价
ST
06+
?SMB
1000
自己公司全新库存绝对有货
询价
ST
24+/25+
5000
原装正品现货库存价优
询价
ST
24+
原厂封装
1000
原装现货假一罚十
询价
STMicroelectronics
24+
NA
3000
进口原装正品优势供应
询价
ST
25+
SMB
2987
只售原装自家现货!诚信经营!欢迎来电!
询价
更多BUK供应商 更新时间2025-9-21 14:14:00