TrilithIC

Description The BTS 7710 G is part of the TrilithIC family containing three dies in one package: One double high-side switch and two low-side switches. The drains of these three vertical DMOS chips are mounted on separated leadframes. The sources are connected to individual pins, so the BTS 7710

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TrilithIC

Description The BTS 7710 GP is part of the TrilithIC family containing three dies in one package: One double high-side switch and two low-side switches. The drains of these three vertical DMOS chips are mounted on separated leadframes. The sources are connected to individual pins, so the BTS 7710

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Infineon

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TrilithIC

Description The BTS 7740 G is part of the TrilithIC family containing three dies in one package: One double high-side switch and two low-side switches. The drains of these three vertical DMOS chips are mounted on separated leadframes. The sources are connected to individual pins, so the BTS 774

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Infineon

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TrilithIC

Features • Quad D-MOS switch driver • Free configurable as bridge or quad-switch • Optimized for DC motor management applications •Low RDS ON: 110 mΩhigh-side switch, 100 mΩ low side switch (typical values @ 25°C) • Maximum peak current: typ. 10 A @ 25°C • Very low quiescent curr

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TrilithIC

Description The BTS 7751 G is part of the TrilithIC family containing three dies in one package: One double high-side switch and two low-side switches. The drains of these three vertical DMOS chips are mounted on separated lead frames. The sources are connected to individual pins, so the BTS 775

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BTS780

Description The BTS 780is a TrilithICcontains one double high-side switch and two low-side switches in one P-TO263-15-1. “Silicon instead of heatsink” becomes true The ultra low RDS ON of this device avoids powerdissipation. It saves costs in mechanical construction and mounting and incre

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SIEMENS

西门子

TrilithIC

Description The BTS 780 GPis part of the TrilithICfamily containing one double high-side switch and two low-side switches in one P-TO263-15-1package. “Silicon instead of heatsink” becomes true The ultra low RDS ONof this device avoids power dissipation. It saves costs in mechanical con

文件：314.33 Kbytes 页数：18 Pages

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High Current PN Half Bridge NovalithIC 43 A, 7 m?? 9 m?

Overview The BTS 7960is part of the NovalithICfamily containing three separate chips in one package: One p-channel highside MOSFET and one n-channel lowside MOSFET together with a driver IC, forming a fully integrated high current half-bridge. All three chips are mounted on one common leadfram

文件：463.71 Kbytes 页数：28 Pages

Infineon

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High Current PN Half Bridge NovalithIC 43 A, 7 m?? 9 m?

Overview The BTS 7960is part of the NovalithICfamily containing three separate chips in one package: One p-channel highside MOSFET and one n-channel lowside MOSFET together with a driver IC, forming a fully integrated high current half-bridge. All three chips are mounted on one common leadfram

文件：463.71 Kbytes 页数：28 Pages

Infineon

英飞凌

High Current PN Half Bridge NovalithIC 43 A, 7 m?? 9 m?

Overview The BTS 7960is part of the NovalithICfamily containing three separate chips in one package: One p-channel highside MOSFET and one n-channel lowside MOSFET together with a driver IC, forming a fully integrated high current half-bridge. All three chips are mounted on one common leadfram

文件：463.71 Kbytes 页数：28 Pages

Infineon

英飞凌